Press Releases 19 to 24 of 1566
20.03.2024 14:15 Ekkono’s Edge Machine Learning simplifies deployment of AI for automotive applications on Infineon’s AURIX™ TC3x and TC4x
Munich, Germany and Varberg, Sweden – 20 March, 2024 – Automotive component suppliers and OEMs alike are faced with the challenge that every car is unique. It is unique in how, where and by whom it is driven, its design, the purpose of the ride, as well as the road and traffic conditions where it operates. To ensure that each vehicle functions well and runs optimally, it is necessary to know and manage it and its conditions individually. The AURIX™ microcontroller (MCU) family from Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) provides advanced real-time computing hardware, e.g. for embedded AI in safety-critical automotive applications. To leverage these powerful capabilities, Infineon’s ecosystem partner Ekkono Solutions now offers an easy-to-use, fast and effective software development kit (SDK) for creating AI algorithms for embedded systems based on AURIX TC3x and TC4x.
14.03.2024 10:15 Infineon partner Thistle Technologies integrates its Verified Boot technology with Infineon’s OPTIGA™ Trust M for enhanced device security
Munich, Germany and San Francisco, CA, USA – 14 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the integration of its OPTIGA™ Trust M security controller, with tamper-resistant hardware certified to Common Criteria EAL6+, with the Verified Boot technology by Thistle Technologies, a pioneer of advanced security solutions for connected devices. This integration enables designers to easily defend their devices against firmware tampering and protect the software supply chain integrity. The result is an improved end-user security, which is particularly important in industries with high security requirements such as healthcare, automotive and device manufacturing.
14.03.2024 08:30 Infineon sues Innoscience for Patent Infringement
Munich, Germany – 14 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates (hereinafter: Innoscience). Infineon is seeking permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon. The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The lawsuit was filed in the district court of the Central District of California.
13.03.2024 14:15 Infineon sets new industry standard for enhanced power density and efficiency with OptiMOS™ 6 200 V MOSFETs
Munich, Germany – 13 March 2024 – Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts. The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others. Additionally, the combination of a wide safe operating area (SOA) and industry-leading RDS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.
12.03.2024 10:15 Infineon’s new CoolSiC™ MOSFETs 2000 V offer increased power density without compromising system reliability
Munich, Germany – 12 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are ideal for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications.
05.03.2024 08:15 Infineon introduces CoolSiC™ MOSFET G2, the next generation of silicon carbide technology for high-performance systems that drive decarbonization
Munich, Germany - March 5, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.
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