| Press Releases 19 to 24 of 1688 |
 |
| 21.02.2025 10:15 |
Infineon CoolGaN™ power transistors enable SounDigital to reach higher fidelity in smaller amplifier systems |
|
Munich, Germany – 21 February 2025 – Manufacturers of cutting-edge audio equipment constantly seek to enhance sound quality while also meeting the growing demand for compact, lightweight, more integrated, and energy-efficient designs. At the same time, they must ensure seamless connectivity, cost-effectiveness, and user-friendly functionality, making audio product development more complex than ever. To overcome these challenges, SounDigital has integrated CoolGaN™ transistors from Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) into its new 1500 W Class D amplifier, featuring an 800 kHz switching frequency and five channels. Infineon’s advanced GaN technology has improved the energy efficiency of the amplifier by five percent and reduced energy loss by 60 percent. |
|
|
| 20.02.2025 15:56 |
Infineon Annual General Meeting approves stable dividend of €0.35 per share; next Annual General Meeting planned as in-person event |
|
Munich – 20 February 2025 – Infineon Technologies AG has finished its 25th Annual General Meeting as a virtual event. |
|
|
| 20.02.2025 09:50 |
Infineon receives approval for funding under the EU Chips Act – IPCEI funding drives innovation projects in Europe forward |
|
Munich, Germany – 20 February 2025 – The European Commission today approved funding under the European Chips Act for the Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) Smart Power Fab in Dresden. The official funding approval from the Federal Ministry for Economic Affairs and Climate Action (BMWK), which is responsible for the disbursement of EU Chips Act funding, is still pending and is expected within the next few months. Additionally, the Smart Power Fab is already receiving support under the European Commission’s IPCEI ME/CT ("Important Project of Common European Interest on Microelectronics and Communication Technologies") innovation program. The total funding for the Dresden site amounts to around one billion euros. Construction began in March 2023 and is progressing successfully. The Fab opening is planned for 2026. |
|
|
| 18.02.2025 10:15 |
Infineon introduces CoolGaN™ G3 Transistor in new Silicon-footprint packages to drive industry-wide standardization |
|
Munich, Germany – 18 February 2025 – Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) addresses this challenge by announcing the high-performance gallium nitride CoolGaN™ G3 Transistor 100 V in RQFN 5x6 package (IGD015S10S1) and 80 V in RQFN 3.3x3.3 package (IGE033S08S1). |
|
|
| 14.02.2025 14:15 |
Project “GENIAL!”: Joint electronics roadmap for innovations in the automotive value chain |
|
Munich, Germany – 14 February 2025 – The automotive industry is facing significant technological challenges in developing new and innovative features and services. When defining their products, vehicle manufacturers must anticipate future technical advancements in microelectronic platforms, sensors, and semiconductor technologies. At the same time, suppliers and semiconductor manufacturers need early insights into the requirements for upcoming features and services to be able to invest in technology development with confidence. |
|
|
| 13.02.2025 10:00 |
Infineon reaches next milestone on 200 mm silicon carbide (SiC) roadmap: Product-roll out to customers starts |
|
Munich, Germany – 13 February 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has made significant progress on its 200 mm silicon carbide (SiC) roadmap. The company will already release the first products based on the advanced 200 mm SiC technology to customers in Q1 2025. The products, manufactured in Villach, Austria, provide first-class SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles. Additionally, the transition of Infineon's manufacturing site in Kulim, Malaysia, from 150-millimeter wafers to the larger and more efficient 200-millimeter diameter wafers is fully on track. The newly built Module 3 is poised to commence high-volume production aligned with market demand. |
|
|
| |
««
«
2
3
4
5
6
»
»»
|
|
|
|
|
|
