Press Releases 7 to 12 of 1714
08.05.2025 07:35 Revenue growth in the second quarter confirms expected economic recovery. Tariff disputes lead to uncertainty in the second half of the fiscal year accompanied by negative currency effects
Neubiberg, 8 May 2025 – Today, Infineon Technologies AG is reporting results for the second quarter of the 2025 fiscal year (period ended 31 March 2025).
07.05.2025 10:15 Infineon OptiMOS™ 6 80V MOSFET sets new benchmark in DC-DC power conversion efficiency in leading AI server platform
Munich, Germany – 7 May 2025 – As graphics processing units (GPUs) keep getting more powerful, so do the power requirements at the board level. Intermediate bus converters (IBCs) – which convert for example a 48 V input voltage to a lower bus voltage – are becoming more important for energy efficiency, power density, and thermal performance in AI data centers. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced that its OptiMOS™ 6 80V power MOSFETs in a compact 5x6 mm² dual side cooling (DSC) package have been integrated into the IBC stage of an AI server platform of a leading processor manufacturer. Application tests show an efficiency increase of around 0.4 percent compared to previously used solutions, corresponding to a saving of around 4.3 W per kW of load. At the system level, this leads to significant energy savings when scaled across server racks or entire data centers. For instance, scaling this across a hypothetical hyperscale data center with 2,000 racks would result in over 1.2 MWh in energy savings every hour – the equivalent energy needed to charge 25 small electric vehicles. The implications of this development are substantial, with cost savings and reduced carbon footprint for data center operators.
06.05.2025 10:15 Accelerating electric vehicle adoption and industrial efficiency: Infineon's SiC superjunction technology sets new standards
Munich, Germany – 6 May 2025 –Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has been a pioneer in the market introduction of silicon carbide (SiC) power devices and trench technology for SiC MOSFETs, combining excellent performance with high robustness. Today, the CoolSiC™ product offering spans from 400 V to 3.3 kV and covers a broad range of applications, including automotive drivetrains, EV charging, solar energy systems, energy storage, and high-power traction inverters. Building on a solid track record in SiC business development and leveraging its position as the innovator of charge-compensating devices in silicon (CoolMOS™), Infineon is now introducing a trench-based SiC superjunction (TSJ) technology concept.
05.05.2025 10:15 Infineon introduces new CoolSiC™ JFET technology for smarter and faster solid-state power distribution
Munich, Germany – 5 May 2025 – To enable the next generation of solid-state power distribution systems, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its silicon carbide (SiC) portfolio with the new CoolSiC™ JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches.
02.05.2025 14:15 Infineon expands its GaN power portfolio with EasyPACK™ CoolGaN™ power modules for high-voltage applications
Munich, Germany – 02 May 2025 – With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is introducing the EasyPACK™ CoolGaN™ Transistor 650 V module, adding to its growing GaN power portfolio. Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing demand for higher performance while providing maximum ease of use, helping customers accelerate their design processes, and shorten time-to-market.
02.05.2025 10:15 Infineon introduces new CoolSET™ System in Package (SiP) in a compact design for highly efficient power delivery up to 60 W for wide input voltage range
Munich, Germany – 02 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching its new CoolSET™ System in Package (SiP), a compact, fully integrated system power controller for highly efficient power delivery of up to 60 W at universal input voltage range of 85 – 305 VAC. Housed in a small SMD package, the high-voltage MOSFET with low RDS(ON) eliminates the need for an external heat sink, reducing system size and complexity. The CoolSET SiP supports zero-voltage switching (ZVS) flyback operation, which enables low switching losses and low EMI signature, while also enhancing system reliability and robustness. This makes it an ideal solution for applications such as major home appliances and AI servers. In addition, the controller makes it easier for developers to meet stringent energy standards, supporting future-proof power solutions for modern designs.
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