Press Releases 7 to 12 of 1540
23.02.2024 09:45 Infineon: Virtual Annual General Meeting 2024
Today the 24th Annual General Meeting of Infineon Technologies AG will take place. You can follow the speeches via live webcast. A recording will be available after the event. The answers to the questions submitted will also be streamed online. Separate credentials are not required.
22.02.2024 09:30 Infineon sells manufacturing sites in Cavite, Philippines and Cheonan, South Korea to ASE, strengthening the strategic partnership of the two companies
Munich and Taipei – 22 February, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and ASE Technology Holding Co., Ltd. (TAIEX: 3711/ NYSE: ASX) today announced that definitive agreements were signed under which Infineon will sell two backend manufacturing sites, one in Cavite, Philippines and one in Cheonan, South Korea, to two fully owned subsidiaries of ASE, a leading provider of independent semiconductor manufacturing services in assembly and test. The plants currently run under the entity names Infineon Technologies Manufacturing Ltd. – Philippine Branch (Cavite) and Infineon Technologies Power Semitech Co., Ltd. (Cheonan) and will be acquired by ASE Inc. and ASE Korea Inc. respectively.
21.02.2024 10:15 Infineon introduces the OPTIGA™ Trust M MTR, making it easy to add Matter and security to smart home devices
Munich, Germany – 21 February, 2024 – In a world of increasing connectivity and the growing popularity of the Internet of Things, it is important to simplify interoperability across connected devices and to enhance their security and reliability. The Matter standard was created precisely for this purpose. In order to facilitate integration of the Matter standard and security features into smart home and smart building devices, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) now introduces the OPTIGA™ Trust M MTR. The Matter-certified Secure Element is the latest configuration of Infineon’s OPTIGA Trust M, combined with a Matter provisioning service.
20.02.2024 11:40 Infineon places €500 million bond with a maturity of three years
Neubiberg – 20 February 2024 – Yesterday, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) successfully placed a corporate bond with a volume of €500 million under its EMTN (European Medium Term Notes) program. The placement was multiple times over-subscribed. The bond has an annual coupon of 3.375% and a maturity of three years.
15.02.2024 10:15 Infineon introduces lower cost Bluetooth® long-range module, CYW20822-P4TAI040, for low power applications
Munich – 15 February 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the CYW20822-P4TAI040, its latest Bluetooth® module that pushes the low-power and range boundaries for wireless connectivity in IoT and consumer electronics. This module is the most cost effective in its class, offers seamless integration, enhanced performance with Bluetooth low-energy long-range (LE-LR) support, and exceptional reliability for a wide range of applications. With the right combination of low power and high performance, Infineon’s CYW20822-P4TAI040 is designed to support the entire spectrum of Bluetooth LE-LR use cases including industrial IoT applications, smart home, asset tracking, beacons and sensors, and medical devices.
14.02.2024 11:25 Infineon drives decarbonization and digitalization with the broadest power solutions portfolio in the industry at APEC 2024
Munich, Germany, and San Jose, California – 14 February 2024 – Today, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a global leader in power systems and IoT, detailed its plans to highlight the industry’s broadest range of power electronic devices during the 2024 Applied Power Electronics Conference (APEC), 25–29 February. Infineon’s wide-bandgap solutions offer the highest efficiency and power density, providing a key element to addressing climate change and accelerating decarbonization efforts. The Infineon best-in-class portfolio includes power devices for leading applications on silicon, silicon carbide (SiC) and gallium nitride (GaN) materials.
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