Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms without compromising safe operation across varying bias voltage conditions. As the New Space economy continues to scale and satellite constellations grow in complexity and number, demand for rad hard power components that support the transition from silicon to GaN is increasing.
