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Infineon Technologies (14.03.2025 10:15)
CoolSiC™ Schottky diode 2000 V now available in TO-247-2 package, enabling higher efficiency and simplifying designs

Munich, Germany – 14 March 2025 – Many industrial applications today are moving towards higher power levels with minimized power losses. One way to achieve this is to increase the DC link voltage. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is addressing this market trend with the CoolSiC™ Schottky diode 2000 V G5 product family, the first discrete silicon carbide diodes with a breakdown voltage of 2000 V, introduced in September 2024. The product portfolio has now been expanded to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product family fits perfectly for applications with DC link voltages up to 1500 VDC, making it ideal for solar and EV chargers.
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