Press Releases 13 to 18 of 1589
29.05.2024 10:15 Infineon announces next generation CoolGaN™ Transistor families built on 8-inch foundry processes
Munich, Germany – 29 May 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announces two new generations of high voltage (HV) and medium voltage (MV) CoolGaNTM devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. These two product families are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria). With this, Infineon expands its CoolGaN advantages and capacity to ensure a robust supply chain in the GaN devices market, which is estimated to grow with an average annual growth rate (CAGR) of 46 percent over the next five years according to Yole Group.
28.05.2024 10:15 PCIM Europe 2024: Infineon drives decarbonization and digitalization for a greener future with innovative semiconductor solutions
Munich, Germany – 28 May 2024 – At PCIM Europe 2024, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will showcase how its latest semiconductor, software, and tooling solutions provide answers to today’s green and digital transformation challenges. Under the motto “Driving decarbonization and digitalization. Together.”, Infineon will demonstrate the industry's broadest power electronics portfolio covering all relevant power technologies in silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). The company will be exhibiting in a larger area this year, with the main booth #740 in Hall 7 demonstrating innovative Si and SiC-based solutions, while the adjacent booth #169 is dedicated to the broad GaN portfolio. Alternatively, visitors can also register for Infineon's digital event platform.
27.05.2024 10:15 Infineon unveils CoolSiC™ MOSFETs 400 V redefining power density and efficiency in AI server power supplies
Munich, Germany – 27 May 2024 – With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2 kW and more per chip by the end of the decade. These needs, as well as the emergence of increasingly demanding applications and the associated specific customer requirements have prompted Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) to extend the development of SiC MOSFETs to voltages below 650 V. The company is now launching the new CoolSiC™ MOSFET 400 V family, which is based on the second generation (G2) CoolSiC technology introduced earlier this year. The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
24.05.2024 09:15 Infineon announces roadmap for state-of-the-art and energy-efficient power supply units in AI data centers
Munich, Germany – 24 May 2024 – The influence of artificial intelligence (AI) is driving up the energy demand of data centers across the globe. This growing demand underscores the need for efficient and reliable energy supply for servers. Today, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in the energy supply domain for AI systems and unveils a roadmap of energy efficient power supply units (PSU) specifically designed to address the current and future energy need of AI data centers.
23.05.2024 10:15 Infineon launches new NFC I2C bridge tag for contactless authentication and secured configuration of IoT devices
Munich, Germany – 23 May 2024 – The number of IoT devices is rapidly increasing, and they have already become a part of every industry. However, as the number of smart devices increases, so do the demands on the user experience in terms of simplicity of device configuration and pairing. To address this, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches the OPTIGA™ Authenticate NBT, a high-performance NFC I2C bridge tag for single-tap authentication and secured configuration of IoT devices. It is the only asymmetric cryptography tag for sign and verify operations in the market certified as a Type 4 Tag by the NFC Forum. OPTIGA Authenticate NBT enables ultra-fast and seamless data exchange even with large data volumes. It enables contactless NFC (Near Field Communication) communication between IoT devices and contactless readers such as smartphones. It can be used for various applications, such as secured configuration of electronic devices without a display, activation of shared mobility vehicles, passive commissioning of unpowered smart light bulbs prior to installation, and data logging on patient health monitors.
15.05.2024 10:15 Infineon presents XENSIV™ TLE49SR angle sensor family with outstanding stray field robustness
Munich, Germany – 15 May 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the new XENSIV™ TLE49SR angle sensor family, which combines excellent stray field immunity with high accuracy. The sensors are ideal for applications of safety-critical automotive chassis systems such as electric power steering and vehicle height leveling.
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