Press Releases 13 to 18 of 1214
15.09.2021 10:15 PSoC™ 64 Standard Secure MCU family achieves PSA Level 2 certification for more secured IoT devices
Munich, Germany – September 15, 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the company has achieved the Arm® Platform Security Architecture (PSA) Level 2 certification for the PSoC™ 64 microcontrollers (MCUs) standard secure family of devices. The Level 2 certification includes a laboratory evaluation of the PSA Root of Trust (PSA-RoT) to provide evidence that devices can protect against scalable software attacks. The evaluation labs use vulnerability analysis and penetration testing of the PSA-RoT to establish if the nine security requirements of the PSA-RoT Protection Profile have been met.
06.09.2021 10:15 Flexibility meets increased power density and performance: Infineon enhances 1200 V EconoDUAL™ 3 portfolio with IGBT7 featuring new current ratings
Munich, Germany – 6 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches new current ratings for its EconoDUAL™ 3 portfolio with TRENCHSTOP™ IGBT7 chips. With the broad range of current classes from 300 A up to 900 A, the portfolio offers inverter designers a high degree of flexibility while also providing increased power density and performance. In addition to solar and drive applications, the portfolio is also tailored for commercial, construction and agricultural vehicles (CAV) as well as for uninterruptible power supply (UPS) inverters.
03.09.2021 10:00 22 kW reference design for an industrial general purpose motor drive combines Infineon’s latest technologies
Munich, Germany – 3 September 2021 – In power electronics and the semiconductor market the system approach is gaining momentum. To support this trend, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a pretested industrial reference design which reduces the time to market significantly. The reference design is a general purpose motor drive which features a nominal power of 22 kW and can be operated directly on a 380 to 480 V three-phase grid. The design can be fully re-used for customization and allows customers to evaluate Infineon’s products under real operating conditions. It is suitable for applications like pumps, fans, compressors, and conveyor belts.
02.09.2021 11:15 Infineon and Panasonic accelerate GaN technology development for 650 V GaN power devices
Munich, Germany and Osaka, Japan – 2 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium nitride (GaN) technology, offering higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed as 650 V GaN HEMT. The devices will allow for ease of use and provide an improved price-performance ratio, targeting, amongst others, high- and low-power SMPS applications, renewables, motor drive applications.
19.08.2021 10:00 VE-VIDES: Twelve partners from research and industry launch joint research project for trustworthy electronics
Munich, Germany – 19 August 2021 – Coordinated by Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the research project "Design methods and hardware/software co-verification for the unique identifiability of electronic components" (VE-VIDES) has begun operations. Twelve partners from the research and academic sectors as well as from electronics and end user industries are working together to develop a holistic security concept for the Internet of Things. The VE-VIDES goal is to already systematically identify potential security gaps in the design phase and to use automatically generated, trustworthy mechanisms to protect electronic systems against attack. The German Federal Ministry of Education and Research is supporting the project as part of its funding measure "Trustworthy Electronics (ZEUS)".
10.08.2021 10:15 New ultra-low loss diode for light vehicle generators reduces CO2 emissions
Munich, Germany – 10 August 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Robert Bosch GmbH are launching a new ultra-low-loss diode called Active Rectifying Diode for light vehicle generators. It enables an increase in generator efficiency of up to eight percent compared to conventional power conversion methods and facilitates generators to qualify as eco-innovations as defined by the European Union. Deploying the new diode can reduce the CO2 emissions of a car by up to 1.8 g/km. Since it can replace standard devices one-to-one, the Active Rectifying Diode can easily be applied even to generators and cars that are already in series production.
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