| Press Releases 31 to 36 of 1611 |
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| 06.06.2024 10:15 |
Infineon presents new 600 V CoolMOS™ 8 SJ MOSFET family for advanced and cost-effective power supply applications |
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Munich, Germany – 6 June 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the 600 V CoolMOS™ 8 high voltage superjunction (SJ) MOSFET product family. The devices combine the best features of the 600 V CoolMOS 7 MOSFET series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families. The new superjunction MOSFETs enable cost-effective Si-based solutions that enhance Infineon's wide-bandgap offering. They are equipped with an integrated fast body diode, making them suitable for a wide range of applications such as server and industrial switched-mode power supply units (SMPS), EV chargers, and micro-solar. |
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| 05.06.2024 10:15 |
Infineon announces CoolGaN™ bidirectional switch and CoolGaN Smart Sense for higher performance and more cost-effective power systems |
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Munich, Germany – 5 June, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced two new CoolGaN™ product technologies, CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense. CoolGaN BDS provides exceptional soft- and hard-switching behavior, with bidirectional switches available at 40 V, 650 V and 850 V. Target Applications of this family include mobile device USB ports, battery management systems, inverters, and rectifiers. The CoolGaN Smart Sense products feature lossless current sensing, simplifying design and further reducing power losses, as well as transistor switch functions integrated into one package. They are ideal for usage in consumer USB-C chargers and adapters. |
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| 03.06.2024 10:15 |
New industrial CoolSiC™ MOSFETs 650 V G2 in TOLT and Thin-TOLL package increase system power density |
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Munich, Germany – 3 June 2024 – The electronics industry is witnessing a significant shift towards more compact and powerful systems, driven by technological advancements and a growing focus on decarbonization efforts. With the introduction of the Thin-TOLL 8x8 and TOLT packages, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is actively accelerating and supporting these trends. They enable a maximum utilization of the PCB mainboard and daughter cards, while also taking the system’s thermal requirements and space restrictions into account. The company is now expanding its portfolio of CoolSiC™ MOSFET discretes 650 V with two new product families housed in the Thin-TOLL 8x8 and TOLT packages. They are based on the CoolSiC Generation 2 (G2) technology, offering significantly improved figures-of-merit, reliability, and ease-of-use. Both product families specifically target high and medium switching-mode power supplies (SMPS), including AI servers, renewable energy, EV chargers, and large home appliances. |
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| 30.05.2024 18:00 |
Infineon receives building permit for final construction phase of Smart Power Fab in Dresden |
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Dresden, Germany – 30 May 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is on schedule with the construction of the Smart Power Fab in Dresden and is initiating the final construction phase. During a visit, the Prime Minister of the free state Saxony, Michael Kretschmer, officially handed over the last outstanding building permit for the new fab issued by the State Directorate of Saxony. The excavation of the building pit has now been completed. The shell and building construction are currently progressing on the concrete foundation, which is up to two meters thick. Infineon officially broke ground for the new plant in Dresden in May 2023. Manufacturing is scheduled to start in 2026. The production will focus on semiconductors that promote decarbonization and digitalization. |
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| 29.05.2024 10:15 |
Infineon announces next generation CoolGaN™ Transistor families built on 8-inch foundry processes |
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Munich, Germany – 29 May 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announces two new generations of high voltage (HV) and medium voltage (MV) CoolGaNTM devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. These two product families are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria). With this, Infineon expands its CoolGaN advantages and capacity to ensure a robust supply chain in the GaN devices market, which is estimated to grow with an average annual growth rate (CAGR) of 46 percent over the next five years according to Yole Group. |
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| 28.05.2024 10:15 |
PCIM Europe 2024: Infineon drives decarbonization and digitalization for a greener future with innovative semiconductor solutions |
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Munich, Germany – 28 May 2024 – At PCIM Europe 2024, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will showcase how its latest semiconductor, software, and tooling solutions provide answers to today’s green and digital transformation challenges. Under the motto “Driving decarbonization and digitalization. Together.”, Infineon will demonstrate the industry's broadest power electronics portfolio covering all relevant power technologies in silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). The company will be exhibiting in a larger area this year, with the main booth #740 in Hall 7 demonstrating innovative Si and SiC-based solutions, while the adjacent booth #169 is dedicated to the broad GaN portfolio. Alternatively, visitors can also register for Infineon's digital event platform. |
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