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    <title>Press Releases of Infineon Technologies</title>
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    <description>Latest press releases of Infineon Technologies (Provided by MEXPERTS AG)</description>
	<language>en-US</language>
	<publisher>Infineon Technologies</publisher>
	<creator>MEXPERTS AG (info@mexperts.de)</creator>
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    <date>2026-06-19T15:41+01:00</date>
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<item rdf:about="https://www.infineon.com/press-release/2026/infxx202606-111">
	<title>Infineon wins IR Impact Awards for Best Investor Relations and Best Investor Relations Officer in Europe</title>
	<link>https://www.infineon.com/press-release/2026/infxx202606-111</link>
	<description>Munich, Germany – 19 June 2026 – The Investor Relations (IR) team of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) secured first place in several key categories at the 2026 “IR Impact Awards – Europe.” In the “Best Overall Investor Relations (Large Cap)” category, the team led by Alexander Foltin, Head of Finance, Treasury &#38; Investor Relations, achieved the top position. In addition, Alexander Foltin and Daniel Györy, Team Lead Investor Relations, were jointly recognized as “Best Investor Relations Officer (Large Cap).”</description>
	<dc:date>2026-06-19T12:30+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/press-release/2026/infxx202606-110">
	<title>Infineon wins patent infringement case against Innoscience</title>
	<link>https://www.infineon.com/press-release/2026/infxx202606-110</link>
	<description>Munich, Germany – 18 June 2026 – The District Court Munich, Germany (Landgericht München I) today ruled in favor of Infineon Technologies in two further of the patent infringement cases – specifically one based on a patent one based on a utility model – concerning gallium nitride (GaN) technology between Infineon and Innoscience. </description>
	<dc:date>2026-06-18T17:10+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/market-news/2026/infpss202606-108">
	<title>Infineon and Vingroup&#39;s VinRobotics form partnership to shape the future of humanoid robots</title>
	<link>https://www.infineon.com/market-news/2026/infpss202606-108</link>
	<description>Munich, Germany – Hanoi, Vietnam – 9 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and VinRobotics have signed a Memorandum of Understanding (MoU) to collaborate on the development of humanoid robots. VinRobotics, a Vietnam-based intelligent robotics company established by Vingroup, Vietnam&#39;s largest private conglomerate by revenue and a recognized force in the technology sector, brings deep regional expertise and industrial scale to the partnership. As part of this collaboration, a joint competency center will be established at VinRobotics&#39; Hanoi office, serving as a dedicated hub for research, development, and innovation in humanoid robotics.</description>
	<dc:date>2026-06-09T09:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/press-release/2026/infgip202606-107">
	<title>Infineon and Siemens leverage silicon carbide technology to advance electrical protection in data centers and factories</title>
	<link>https://www.infineon.com/press-release/2026/infgip202606-107</link>
	<description>–	Infineon and Siemens collaborate to drive semiconductor circuit breaker technology for data centers, production facilities and battery storage systems
–	Semiconductor circuit breakers are fast-acting, semiconductor-based electronic devices that protect electrical circuits and components from damage caused by short circuits or overloads
–	Infineon&#39;s silicon carbide power modules enhance the efficiency, power density and reliability of the Siemens circuit breaker

Munich, Germany – 8 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Siemens AG are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules to Siemens for use in its SENTRON 3QD2 semiconductor circuit breakers. This will enhance the efficiency, power density and reliability of Siemens&#39; protection solution.</description>
	<dc:date>2026-06-08T10:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/press-release/2026/infxx202606-104">
	<title>Infineon advances Physical AI security against quantum-era threats with certified TPM solution for NVIDIA Jetson Thor</title>
	<link>https://www.infineon.com/press-release/2026/infxx202606-104</link>
	<description>Munich, 03 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announces the integration of its OPTIGA™ Trusted Platform Module (TPM) SLB 9672 with NVIDIA’s Jetson Thor platform. The hardware-based security solution securely stores cryptographic keys and verifies system integrity at the chip level, establishing a certified, quantum-resilient root of trust for Physical AI systems. The integration strengthens the security foundation, enabling robots and autonomous systems to operate securely and reliably across their full lifecycle. As these systems move from controlled environments into factories and public spaces, the impact of a security failure extends beyond data loss to operational disruption and regulatory liability. For the robotics industry, the security architecture decisions made at design-in have lasting commercial and compliance implications.</description>
	<dc:date>2026-06-03T11:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/market-news/2026/infpss202606-102">
	<title>Infineon extends XENSIV™ magnetic sensing portfolio with high-performance TMR technology</title>
	<link>https://www.infineon.com/market-news/2026/infpss202606-102</link>
	<description>Munich, Germany – 02 June 2026 — Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its proven XENSIV™ magnetic sensing portfolio with a comprehensive range of Tunnel Magnetoresistance (TMR) sensors. Complementing the company&#39;s established Hall, GMR and AMR sensing solutions, the new TMR technology unlocks unique capabilities in magnetic sensing. TMR delivers exceptional sensitivity and a high signal-to-noise ratio (SNR), enabling accurate parameter retrieval and reliable sensing from smaller magnets without bandwidth limitations. Performance is maintained across larger airgaps and with increased mechanical tolerances. This makes TMR sensors ideal for low power position sensing in gaming and HMI (Human-Machine Interface), health and lifestyle wearables, and for position and current sensing in automotive and industrial applications.</description>
	<dc:date>2026-06-02T10:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/market-news/2026/infpss202606-101">
	<title>Infineon introduces OptiMOS™ 8 100 V power MOSFETs for motor drives and battery protection applications</title>
	<link>https://www.infineon.com/market-news/2026/infpss202606-101</link>
	<description>Munich, Germany – 02 June 2026 – Megatrends such as green mobility, robotics, and artificial intelligence are placing increasingly demanding requirements on power systems in terms of reliable load current handling. To address these challenges, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the OptiMOS™ 8 100 V power MOSFET technology, featuring application-specific optimizations for RDS(on) -driven applications such as motor control and battery protection.</description>
	<dc:date>2026-06-02T10:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/market-news/2026/infpss202606-100">
	<title>Infineon CoolSET™ SiP variants extend output power range to help designers meet EU energy efficiency regulations</title>
	<link>https://www.infineon.com/market-news/2026/infpss202606-100</link>
	<description>Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces three new variants of the CoolSET™ System-in-Package (SiP), the ICE188LM, ICE189LM, and ICE180LM, extending the supported output power range and helping white goods manufacturers comply with increasingly stringent EU energy efficiency and standby power regulations. The CoolSET SiP integrates a high-voltage MOSFET with a PWM controller on the primary side, a synchronous rectification (SR) controller on the secondary side, reinforced galvanic isolation, and comprehensive protection functions in a single package. This level of integration reduces system losses, lowers component count, and simplifies the design of energy-efficient auxiliary power supplies for household appliances up to 150 W.</description>
	<dc:date>2026-06-02T10:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/market-news/2026/infpss202606-099">
	<title>Infineon expands 750V CoolSiC™ portfolio with top-side-cooled H-DPAK half-bridge devices for enhanced system density and reliability</title>
	<link>https://www.infineon.com/market-news/2026/infpss202606-099</link>
	<description>Munich, Germany – 02 June 2026 – Power conversion architectures in automotive and industrial applications are evolving rapidly, placing new demands on switching topologies, thermal management, and system integration. To address these requirements, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the H-DPAK, a new addition to its top-side cooling package family, housing integrated half-bridge (HB) devices in 750 V CoolSiC™ G2 technology. The 750V CoolSiC G2 brings the reliability margin what modern grids and energy systems demand. The H-DPAK integrates a complete unidirectional half-bridge power stage in a single package. A split lead frame design with optimized drain pads enhances heat spreading and ensures clearance compliance in dense, high-power board layouts, while matching the industry-standard 2.3 mm height of Infineon&#39;s established Q-DPAK and TOLT packages for seamless board-level integration. The result is a liquid cooling ready, scalable, drop-in-compatible solution that reduces parasitic loop inductance for cleaner fast switching, cuts passive component size, and delivers the proven performance of CoolSiC™ technology – including excellent RDS(on) x QOSS, best-in-class RDS(on) x Qfr, and superior robustness under avalanche, overload, and short-circuit conditions. </description>
	<dc:date>2026-06-02T10:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/market-news/2026/infpss202606-098">
	<title>Infineon launches industry-first silicon carbide bidirectional switch based on CoolSiC™ G2 technology </title>
	<link>https://www.infineon.com/market-news/2026/infpss202606-098</link>
	<description>Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces silicon carbide (SiC) bidirectional switches (BDS) built on rugged 750 V CoolSiC™ G2 technology. A vertically integrated dual-die with common drain design in a top-side-cooled Q-DPAK package integrates two power switches into one for simplifying design and enable revolution of legacy topologies. While the available 650V CoolGaN BDS targets power density with high frequency, the 750V CoolSiC BDS delivers reliability margin what modern grids and energy systems demand resulting lowest Total Cost of Ownership during the application lifetime.</description>
	<dc:date>2026-06-02T10:15+01:00</dc:date>
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