http://www.presseagentur.com/?lang=en Latest press releases of Infineon Technologies (Provided by MEXPERTS AG) en-US Infineon Technologies MEXPERTS AG (info@mexperts.de) Copyright 2010 MEXPERTS AG 2026-09-17T18:45+01:00 http://www.presseagentur.com/?lang=en http://www.presseagentur.com/pics/rdf_logo.gif https://www.infineon.com/technology-news/2026/inftn202609-139 Munich, Germany – 17 September 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the EiceDRIVER™ 2EDL6014AC-G2D, a 120 V junction-isolated dual channel floating output gate driver engineered for high-density silicon power designs in AI datacenter applications. Housed in a compact WQFN-12 2.2 mm x 2.2 mm package, the device addresses the growing demand for power conversion solutions that deliver higher server rack density without sacrificing reliability or thermal performance. The 2EDL6014AC-G2D supports dual high-side, dual low-side, and half-bridge configurations, making it a versatile platform driver across the switched-capacitor and multilevel topologies increasingly adopted in next-generation AI server power architectures. 2026-09-17T10:15+01:00 https://www.infineon.com/press-release/2026/infpr202609-138 – Companies extend collaboration into solid-state circuit breaker (SSCB) technology in line with leading industry framework for 800 Volts direct current (VDC) architecture – SSCB technology is designed to interrupt DC faults orders of magnitude faster than electromechanical breakers, addressing one of the key challenges in deploying high-voltage DC power architectures – The collaboration advances a DC-native power architecture from medium-voltage grid connection through distribution to the rack, to support higher density, greater reliability and reduced environmental impact for AI data centers Munich, Germany and Milpitas, California – 9 September, 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and SolarEdge Technologies, Inc. (NASDAQ: SEDG), a global leader in smart energy, today announced an extension of their collaboration to advance solid-state circuit breaker (SSCB) technology for high-voltage DC distribution in AI and hyperscale data centers. The collaboration addresses a key challenge in the adoption of 800 VDC architecture: Safe operation of increasingly power-dense infrastructure requires a very fast fault-isolation to achieve selectivity while maintaining high efficiency. 2026-09-09T13:45+01:00 https://www.infineon.com/technology-news/2026/inftn202609-137 Munich, Germany – 8 September 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced the OPTIREG™ PMIC TLE9744QK, a fully integrated Power Management IC (PMIC) specifically designed for high-voltage traction inverter applications in electric and hybrid vehicles. It consolidates complete power-supply functions, resolver excitation, and a dedicated safety engine into a single device. This simplifies traction inverter Electronic Control Unit (ECU) design and addresses the complex challenge of supplying multiple isolated power rails for microcontrollers, communication modules, and sensors. By replacing multiple discrete components with this single-chip solution, the TLE9744QK directly reduces system cost and complexity. This integration significantly lowers the bill-of-materials (BOM) count and shrinks the PCB footprint by up to 70 percent for the replaced devices, while enhancing overall system reliability and functional safety. 2026-09-08T10:15+01:00 https://www.infineon.com/technology-news/2026/inftn202609-136 Munich, Germany – 7 September 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the TDA235E5 and TDA235E0, a dual-phase smart power stage family designed to meet the rapidly growing power density requirements of next-generation AI accelerators and vertical power delivery modules. Integrating Infineon's OptiMOS™ 6 MOSFETs and a dual-phase driver IC in a compact 6 x 6 x 0.8 mm³ package, the new family delivers benchmark power density exceeding 2 A/mm², setting a new reference point for power stage performance in high-current AI processor applications. As hyperscalers and datacenter operators continue to scale AI infrastructure, the demand for power delivery solutions that combine higher current capability with shrinking physical footprints is becoming a critical bottleneck. 2026-09-07T10:15+01:00 https://www.infineon.com/technology-news/2026/inftn202609-135 Munich, Germany – 3 September 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and mPTech are strengthening their cooperation to bring secured, convenient payment experiences to the next generation of wearables. mPTech, a European original equipment manufacturer (OEM) has integrated Infineon’s SECORA™ secured payment technology into its latest flagship Hammer smartwatch, combining Infineon’s expertise in secured payment solutions with mPTech’s strong position in consumer electronics. The collaboration shows how Infineon’s SECORA One-stop-shop solution including both SECORA Connect X and SECORA Wallet can help wearable OEMs accelerate the integration of secured and CDCVM-enabled payments into consumer wearable devices. 2026-09-03T10:15+01:00 https://www.infineon.com/technology-news/2026/inftn202609-134 Munich, Germany – 2 September 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Skeleton Technologies, a global leader in high-power energy storage systems inter alia for AI data centers, have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency, resilient power solutions for modern data centers. The rapid growth of AI, increasing power demand and the need for highly reliable digital infrastructure are driving a new generation of power architecture. Solid-state transformers (SSTs) and high-power sidecars are increasingly important building blocks for AI data center infrastructure. They enable more efficient power conversion from grid to core and higher system resilience. Accordingly, the two companies aim to advance these technologies to improve energy efficiency and system performance throughout the power delivery chain. 2026-09-02T10:15+01:00 https://www.infineon.com/technology-news/2026/inftn202608-132 Munich, Germany – 31 August 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) radiation-hardened HiRel power devices are aboard the Nancy Grace Roman Space Telescope, which lifted off from Kennedy Space Center in Florida, marking the successful launch of NASA's next flagship space observatory. The Roman Space Telescope will travel to the second Sun-Earth Lagrange point (L2), more than 1.5 million kilometers from Earth, the same orbital position as the James Webb Space Telescope, where stable gravitational conditions and an unobstructed view of a wide swath of the sky will support the mission's scientific program. The Roman Space Telescope mission adds to Infineon’s space heritage that stretches back to the 1970s, during which the company supported hundreds of space missions including navigation satellites, the International Space Station, and NASA's Artemis program, with rad-hard components that have traveled more than 20 billion kilometers from Earth. 2026-08-31T10:15+01:00 https://www.infineon.com/technology-news/2026/inftn202608-131 Munich, Germany – 26 August 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) supplies silicon carbide (SiC) power semiconductors to Fox ESS, a leading provider of renewable energy solutions, to enhance the efficiency of its residential energy storage systems (ESS). Leveraging Infineon's CoolSiC™ MOSFETs 1200 V G2 in the Q-DPAK package, Fox ESS has reduced switching losses by 70 percent. As a result, the company’s PQ3-Ultra energy storage system achieves a peak photovoltaic (PV) inverter efficiency of up to 98.78 percent in grid-tied operation and a peak battery charge/discharge efficiency of up to 98.47 percent. 2026-08-26T10:15+01:00 https://www.infineon.com/press-release/2026/infpr202608-129 –    Acquisition strengthens Infineon’s leadership in power solutions for AI data centers and accelerates software-defined power architectures from grid to core –    C2i Semiconductors adds highly differentiated expertise in intelligent digital power management, multiphase controllers and system-level power architectures especially for vertical power delivery including Substrate Integrated Voltages Regulators (SIVR) –    Transaction expands Infineon’s innovation footprint in India and further strengthens its global R&D capabilities Munich, Germany / Bangalore, India – 24 August 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the acquisition of C2i Semiconductors, a Bangalore-based technology company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. C2i Semiconductors’ technology complements Infineon’s leading portfolio of power semiconductors and power systems, enabling intelligent and scalable power delivery architectures from grid to core for AI servers and high-performance computing platforms. The acquisition further strengthens Infineon’s top position in power solutions for AI data centers while expanding its engineering capabilities in India and reinforcing the country’s role as a strategic innovation hub. The transaction is expected to close in the third quarter of calendar year 2026. 2026-08-24T15:00+01:00 https://www.infineon.com/press-release/2026/infpr202608-130 Munich, Germany – 21 August 2026 – On 20 August 2026, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) successfully completed its Share Buyback Program, announced on 10 August 2026 in accordance with Article 5(1) lit. (a of Regulation (EU) No 596/2014 and Article 2(1) of Delegated Regulation (EU) 2016/1052. As part of the Share Buyback Program, a total of 3 million shares (ISIN DE0006231004) were acquired. The total purchase price of the repurchased shares was € 175,348,677. The average purchase price paid per share was € 58.45. 2026-08-21T14:00+01:00