Press Releases 1 to 6 of 1204
17.09.2021 11:00 Infineon opens high-tech chip factory for power electronics on 300-millimeter thin wafers
Munich, Germany, and Villach, Austria, 17 September 2021 – Infineon Technologies AG today officially opened its high-tech chip factory for power electronics on 300-millimeter thin wafers at its Villach site in Austria under the motto “Ready for Mission Future.” At 1.6 billion euros, the investment made by the semiconductor group represents one of the largest such projects in the microelectronics sector in Europe. The Villach site is one of the world’s most modern fabs and was opened by Infineon CEO Reinhard Ploss, Infineon Austria CEO Sabine Herlitschka along with EU Commissioner Thierry Breton and Austrian Chancellor Sebastian Kurz.
16.09.2021 12:30 Switched capacitor intermediate bus converter delivers high power density for 48 V data center applications
Munich, Germany, and Stockholm, Sweden – 16 September 2021 – Flex Power Modules introduces the BMR310, a non-isolated switched capacitor intermediate bus converter (IBC) which provides high power density for data centers, thus improving board space utilization and freeing space for other components. Built on the proprietary Zero voltage switching Switched capacitor Converter (ZSC) technology of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the BMR310 achieves efficiency of over 98 percent at half load and can deliver power up to 875 W continuous in a compact package. It operates over an input voltage range of 40 V to 60 V, and delivers an unregulated output voltage of 10 V to 15 V.
15.09.2021 10:15 PSoC™ 64 Standard Secure MCU family achieves PSA Level 2 certification for more secured IoT devices
Munich, Germany – September 15, 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the company has achieved the Arm® Platform Security Architecture (PSA) Level 2 certification for the PSoC™ 64 microcontrollers (MCUs) standard secure family of devices. The Level 2 certification includes a laboratory evaluation of the PSA Root of Trust (PSA-RoT) to provide evidence that devices can protect against scalable software attacks. The evaluation labs use vulnerability analysis and penetration testing of the PSA-RoT to establish if the nine security requirements of the PSA-RoT Protection Profile have been met.
06.09.2021 10:15 Flexibility meets increased power density and performance: Infineon enhances 1200 V EconoDUAL™ 3 portfolio with IGBT7 featuring new current ratings
Munich, Germany – 6 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches new current ratings for its EconoDUAL™ 3 portfolio with TRENCHSTOP™ IGBT7 chips. With the broad range of current classes from 300 A up to 900 A, the portfolio offers inverter designers a high degree of flexibility while also providing increased power density and performance. In addition to solar and drive applications, the portfolio is also tailored for commercial, construction and agricultural vehicles (CAV) as well as for uninterruptible power supply (UPS) inverters.
03.09.2021 10:00 22 kW reference design for an industrial general purpose motor drive combines Infineon’s latest technologies
Munich, Germany – 3 September 2021 – In power electronics and the semiconductor market the system approach is gaining momentum. To support this trend, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a pretested industrial reference design which reduces the time to market significantly. The reference design is a general purpose motor drive which features a nominal power of 22 kW and can be operated directly on a 380 to 480 V three-phase grid. The design can be fully re-used for customization and allows customers to evaluate Infineon’s products under real operating conditions. It is suitable for applications like pumps, fans, compressors, and conveyor belts.
02.09.2021 11:15 Infineon and Panasonic accelerate GaN technology development for 650 V GaN power devices
Munich, Germany and Osaka, Japan – 2 September 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium nitride (GaN) technology, offering higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed as 650 V GaN HEMT. The devices will allow for ease of use and provide an improved price-performance ratio, targeting, amongst others, high- and low-power SMPS applications, renewables, motor drive applications.
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