| Press Releases 25 to 30 of 1785 |
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| 21.10.2025 16:15 |
Infineon launches industry’s first radiation hardened buck controller with integrated gate drive |
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Munich, Germany – 21 October 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the industry's first radiation-hardened (rad-hard) buck controller with an integrated gate drive. Designed for Point of Load (PoL) power rails in commercial space systems and other extreme environments, the new device is particularly well-suited for distributed satellite power systems and digital processing payloads, including FPGA and ASIC systems. |
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| 20.10.2025 11:45 |
Infineon presents XENSIV™ TLE4971/TLI4971, the most accurate coreless magnetic current sensor on the market |
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Munich, Germany – 20 October 2025 – Accurate current measurement is key to efficient, safe, and reliable power electronics. To address this, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its XENSIV™ magnetic current sensor family with the new TLE4971/TLI4971 sensors, housed in a 300-mil package. These new products offer the highest accuracy in magnetic coreless current sensors on the market, with a total error of only 0.7 percent over temperature and lifetime. Combined with the characteristics of the 300-mil package, the high accuracy makes them ideal for current conversion in automotive and industrial applications. |
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| 17.10.2025 10:15 |
CoolSiC™ MOSFETs 1400 V G2 in TO-247PLUS-4 Reflow package enhance power density in high-power applications |
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Munich, Germany – 17 October 2025 – High-power applications such as electric vehicle charging, battery energy storage systems, and commercial, construction and agricultural vehicles (CAVs) are driving the demand for higher system-level power density and efficiency to meet increasing performance expectations. At the same time, these requirements introduce new design challenges, including reliable operation under harsh environmental conditions, robustness against transient overloads, and optimized overall system performance. To address these challenges, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched the CoolSiC™ MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link voltages and enable improved thermal performance, reduced system size and enhanced reliability. |
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| 16.10.2025 11:30 |
Driving innovation: Infineon honored with a “Bosch Global Supplier Award” |
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Munich, Germany – 16 October 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the market leader in automotive semiconductors, has been honored with a “Bosch Global Supplier Award 2025”. The award was presented by Bosch, a leading global supplier of technology and services, in the category “Materials and components”, recognizing Infineon’s excellence in innovation and product development in the fields of microcontrollers and power. |
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| 16.10.2025 10:15 |
DEEPCRAFT™ AI Suite und PSOC™ Edge-Mikrocontroller – Infineon definiert Edge AI neu |
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München, 16. Oktober 2025 – Edge AI verändert unseren Alltag und das Leben in einer zunehmend vernetzten Welt. Um diesen Wandel voranzutreiben, erweitert die Infineon Technologies AG ihr Edge-KI-Portfolio um die DEEPCRAFT™ AI Suite. Das umfassende Paket aus Software, Tools und Lösungen unterstützt Kunden dabei, künstliche Intelligenz nahtlos in ihre Produkte zu integrieren und ist ab sofort verfügbar. Die DEEPCRAFT-Lösungen sind für PSOC™ Edge-Mikrocontroller von Infineon optimiert und ermöglichen es Entwicklerinnen und Entwicklern, das Edge AI-Ökosystem von Infineon voll auszuschöpfen, indem sie Performance-on-Demand, energieeffizientes Design und Optimierung auf Systemebene miteinander verbinden. Auf diese Weise unterstützt Infineon jeden Schritt der Edge AI-Entwicklung, von der frühen Konzept- und Modellentwicklung bis hin zum Einsatz auf energieeffizienter Hardware. |
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| 15.10.2025 14:15 |
Infineon advances gallium nitride (GaN) innovation in automotive with first 100 V automotive-qualified transistors |
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Munich, Germany – 15 October 2025 – Infineon Technologies AG is further advancing on its path to become a leading GaN powerhouse and bolstering its position as the world’s leader in automotive semiconductors by introducing its first gallium nitride (GaN) transistor family qualified to the Automotive Electronics Council (AEC) standard for automotive applications. |
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