| Press Releases 25 to 30 of 1778 |
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| 14.10.2025 14:15 |
Infineon launches next-generation highly integrated XENSIV™ 60 GHz CMOS radar for low-power IoT solutions |
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Munich, Germany– 14 October 2025 – Today, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launched its next-generation, highly integrated 60 GHz CMOS radar sensor. Targeting ultra-low power IoT solutions, the Infineon XENSIV™ BGT60CUTR13AIP aims to become a key sensor for Physical AI to increase the intelligence of smart home and IoT devices. The new radar sensor is fully supported by Infineon hardware and software, third-party modules, and transferable FCC certification to aid fast-time-to-market. |
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| 14.10.2025 10:15 |
Infineon’s PQC-certified contactless and dual-interface security controller – another step towards a quantum-safe world |
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Munich, Germany – 14 October 2025 – Quantum computers are expected to become powerful enough within the next decade to compromise many of today's cryptographic algorithms, putting a wide range of systems at risk. Long-life products such as ePassports, IoT devices and Secure Elements, therefore, demand post-quantum cryptography (PQC)-ready hardware already today. To address this, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is now providing the SLC27 security controller with a Common Criteria-certified cryptography library featuring the PQC algorithms ML-KEM and ML-DSA. As part of the TEGRION™ security controller family and based on the Integrity Guard 32 security architecture, the SLC27 supports standardized PQC implementations across multiple applications, enabling OEMs to integrate quantum-resistant security into their designs. |
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| 13.10.2025 17:10 |
Infineon advances leading-edge 800 Volt AI data center power architecture enabling better efficiency and serviceability |
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Munich, Germany and Santa Clara, CA – 13 October 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) supports the 800 Volt direct current (VDC) power architecture announced by NVIDIA at Computex 2025 for AI infrastructure. The exponential growth of artificial intelligence is rapidly outstripping the capacity of the current 54 V data center power infrastructure. A shift to a centralized 800 VDC architecture allows for reduced power losses, higher efficiency and reliability. However, the new architecture requires new power conversion solutions and safety mechanisms to prevent potential hazards and costly server downtimes e.g. due to service and maintenance. |
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| 09.10.2025 10:15 |
Infineon expands power path protection portfolio for 48 V and future AI data center architectures operating at 400 V and 800 V |
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Munich, Germany – 09 October 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today launched its 48 Volt smart eFuse family and a reference board for hot-swap controllers for 400 V and 800 V power architectures in AI data centers. This enables developers to design a reliable, robust and scalable solution to protect and monitor energy flow. |
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| 01.10.2025 10:15 |
Infineon presents first high-density trans-inductance voltage regulator (TLVR) power modules optimized for AI data centers |
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Munich, Germany – 01 October 2025 – As a result of the rapid growth of cloud-based services, particularly those enabling artificial intelligence (AI), data centers are now responsible for more than two percent of global energy consumption. This figure is expected to rise further, with exponential growth of 165 percent predicted between 2023 and 2030. Continuously improving efficiency, power density, and signal integrity of power conversion from the grid to the core is therefore critical to advancing computing performance while reducing total cost of ownership (TCO). To address this need, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching the OptiMOS™ TDM22545T dual-phase power module, the industry's first trans-inductance voltage regulator (TLVR) module specifically designed for high-performance AI data centers. |
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| 30.09.2025 10:45 |
Infineon expands CoolSiC™ portfolio with 400 V and 440 V MOSFETs for high-power and compute-intensive applications |
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Munich, Germany – 30 September 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has expanded its CoolSiC™ MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT package as well as the TO-247-3 and TO-247-4 packages. In addition, three new products in the TOLL package have been introduced, with rated voltages of 440 V (continuous) and 455 V (transient). The new CoolSiC MOSFETs deliver improved thermal performance, system efficiency, and power density. They have been specifically designed to meet the requirements of high-power and compute-intensive applications, including AI server power supplies, solar inverters, uninterruptible power supplies, Class D audio amplifiers, motor drives, and solid-state circuit breakers. For these critical systems, the devices provide the required reliability and performance. |
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