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| 21.08.2025 14:00 |
ROHM Releases a New Compact PFC + Flyback Control Reference Design for Power |
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Willich-Münchheide, Germany, August 21, 2025 – ROHM’s new reference design (REF67004) is capable of controlling two commonly used power converter types in consumer and industrial power supply applications by using a single MCU: critical conduction mode PFC (Power Factor Correction) and quasi-resonant flyback. This is part of ROHM’s LogiCoA Power Supply Solution, that leverages analog-digital hybrid control technology. It combines an analog-controlled power stage circuit featuring ROHM’s superior silicon MOSFETs and gate driver ICs with a digitally managed power supply circuit built around the low-power LogiCoA MCU. |
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| 10.07.2025 14:00 |
ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed |
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Willich-Münchheide, Germany, July 10, 2025 – ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance. |
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| 08.07.2025 14:00 |
ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications |
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Willich-Münchheide, Germany, July 08, 2025 – ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0milliohm (typ.) in a compact 2.0mm × 2.0mm package. |
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| 01.07.2025 14:00 |
ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance |
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Willich-Münchheide, Germany, July 01, 2025 – ROHM has released of a 100V power MOSFET – RY7P250BM – optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market. |
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| 25.06.2025 14:00 |
ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices |
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Willich-Münchheide, Germany, June 25, 2025 – ROHM has developed an isolated gate driver IC - the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. |
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| 23.06.2025 11:00 |
ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market |
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Willich-Münchheide, Germany, June 23, 2025 – The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corporation's (hereinafter "Toyota") new crossover BEV "bZ5" for the Chinese market. |
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