| Press Releases 1 to 6 of 285 |
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| Other languages: Deutsch | English | Français | Italiano | Español |
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| 08.10.2026 14:00 |
ROHM Showcases Technologies Powering AI, Next-Generation Mobility and Industrial Innovation at electronica 2026 |
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Willich, Germany, October 8, 2026 – ROHM Semiconductor Europe will return to electronica 2026, taking place from 10 to 13 November 2026 in Munich, Germany. Visitors can meet the ROHM team at Hall C3, Booth 520, where the company will showcase its latest power and analog semiconductor solutions for AI infrastructure, electric mobility, industrial automation, and next-generation electronic systems. |
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| 17.09.2026 09:00 |
ROHM's Silicon Carbide contributes to the “Neue Klasse” Electric Powertrain Architecture of BMW |
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Willich-Münchheide, September 17, 2026 – ROHM Semiconductor announces that its innovative power semiconductor solutions are being utilized in electric vehicle platforms from a leading global premium automotive manufacturer. In BMW’s “Neue Klasse”, ROHM’s SiC (Silicon Carbide) chips support the efficiency, performance, and reliability of the vehicle's electric powertrain systems. |
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| 15.09.2026 14:00 |
ROHM Launches a MOSFET with Industry-Leading* Wide-SOA for Automotive Safety Functions and Protection Circuits |
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Willich-Münchheide, Germany, September 15, 2026 – ROHM has developed the RS4P063BPHZG, a 100V MOSFET optimized for automotive safety functions and protection circuits. The new product achieves industry-leading* Wide-SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (5060-size) package widely used in automotive applications. By incorporating a design that effectively suppresses secondary breakdown, it delivers approximately 5 times the SOA tolerance of standard equivalent-sized products under VDS=100V and PW=100μs. This contributes to greater reliability in automotive applications subject to momentary high-power loads, including airbag inflator ignition circuits and seatbelt pretensioner drive circuits. |
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| 10.09.2026 14:00 |
ROHM’s New High Anti-Surge Chip Resistors SDR01 Series Achieve 0.33W Rated Power in the 0402 Size |
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Willich-Münchheide, Germany, September 10, 2026 – ROHM has developed the “SDR01 Series” of high anti-surge chip resistors, delivering a class-leading* rated power of 0.33W in the 0402 (1005 Metric) size. Designed for electronic equipment where mounting densities continue to increase, the series is well suited for automotive, industrial, consumer electronics, and AI server applications. The new products help save board space and reduce component count by enabling replacement of larger-size resistors and consolidation of resistors while maintaining the reliability required of anti-surge chip resistors. |
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| 25.08.2026 14:00 |
ROHM Introduces 650V IGBTs Achieving Industry-Leading* Low Loss Characteristics |
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Willich-Münchheide, Germany, August 25, 2026 – ROHM has developed 4th Generation 650V IGBTs ideal for automotive electric compressors and HV heaters, as well as inverters for industrial equipment. As automotive-grade 650V-class products, new IGBTs achieve class-leading* low conduction loss with VCE(sat)= 1.55V, while providing high short-circuit tolerance and complying with the AEC-Q101 automotive reliability standard. |
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| 04.08.2026 14:00 |
ROHM’s New 2nd Generation Terahertz Wave Oscillation Device Delivers 4 Times Higher Output Power |
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Willich-Münchheide, Germany, August 4, 2026 – ROHM has developed a 2nd Generation terahertz (THz) wave oscillation device using semiconductor elements known as Resonant Tunneling Diodes (RTDs). ROHM is making the device available via the RTD-EVK-G2 Terahertz Wave Device Evaluation Kit, which includes a sample device, cable, and evaluation board. The kit enables companies and research institutions to evaluate THz wave oscillation and detection in a compact development environment. |
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