Press Releases 1 to 6 of 280
04.08.2026 14:00 ROHM’s New 2nd Generation Terahertz Wave Oscillation Device Delivers 4 Times Higher Output Power
Willich-Münchheide, Germany, August 4, 2026 – ROHM has developed a 2nd Generation terahertz (THz) wave oscillation device using semiconductor elements known as Resonant Tunneling Diodes (RTDs). ROHM is making the device available via the RTD-EVK-G2 Terahertz Wave Device Evaluation Kit, which includes a sample device, cable, and evaluation board. The kit enables companies and research institutions to evaluate THz wave oscillation and detection in a compact development environment.
30.07.2026 14:00 ROHM Launches “Engineer Social Hub”: Engineers supporting Engineers
Willich-Münchheide, Germany, July 30, 2026 – ROHM Co., Ltd. announces the launch of the English-language version of Engineer Social Hub, an online platform designed to make ROHM’s technical information, know-how, and support more accessible to engineers. Engineer Social Hub brings together ROHM’s technical content related to semiconductor products and solutions in one place. Through product-specific FAQs and discussions, as well as a chatbot, users can search for solutions to technical questions and obtain direct support from ROHM engineers.
22.07.2026 14:00 New Buck-Boost DC-DC Eval Board for Ultra-Compact Mounting
Willich-Münchheide, Germany, July 22, 2026 – ROHM has developed a new evaluation board, the BD83070GWL-EVK-002. It is designed to fully demonstrate the features of the BD83070GWL DC-DC converter IC, which combines high efficiency with ultra-low current consumption.
09.07.2026 14:00 ROHM Launches 600V Super Junction MOSFETs in Surface-Mount Package with High Thermal Performance
Willich-Münchheide, Germany, July 09, 2026 – ROHM has developed a new lineup of 600V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series.
17.06.2026 14:00 ROHM Launches AG16xFNxx Series MOSFETs for Automotive 48V Power Supply Systems
Willich-Münchheide, Germany, June 17, 2026 – ROHM has developed the “AG16xFNxx Series,” a lineup of 80V power MOSFETs designed for 48V power supply systems, which are becoming increasingly common in automotive applications.
09.06.2026 09:00 ROHM launches New Top-Side Cooling Package for SiC MOSFETs, Combining High Heat Dissipation with High Voltage Support
Willich-Münchheide, Germany, June 09, 2026 – ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L). This contributes to greater efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors used in xEVs (electric vehicles).
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