Press Releases 7 to 12 of 196
17.01.2024 14:00 The Industry's First* Speech Synthesis ICs Dedicated for AVAS (Acoustic Vehicle Alerting System) in xEVs
Willich-Münchheide, Germany, January 17, 2024 – The ROHM group company LAPIS Technology has developed the industry's first speech synthesis ICs – the ML22120xx series (ML22120TB, ML22120GP) – designed for AVAS in xEVs (electric vehicles).
14.12.2023 14:00 ROHM Completes Demonstration of Manufacturing Process Optimization – by applying Quanmatic's Quantum Technology
Willich-Münchheide, Germany, December 14, 2023 – From January 2023, ROHM has been collaborating with Quanmatic to introduce quantum technology into the EDS (Electrical Die Sorting) process, conducting demonstrations aimed at optimizing combinations during manufacturing. Today, ROHM and Quanmatic announce that, as certain benchmarks have been met regarding production efficiency, both companies plan on carrying out full-scale implementation in April 2024. This represents the world's first demonstration of manufacturing process optimization using quantum technology in a large-scale mass production line at a semiconductor manufacturing plant.
08.12.2023 11:45 ROHM and Toshiba Agree to Collaborate in Manufacturing Power Devices
Willich-Münchheide, Germany, December 08, 2023 – A plan by ROHM Co., Ltd. (“ROHM”) and Toshiba Electronic Devices & Storage Corporation (“Toshiba Electronic Devices & Storage”) to collaborate in the manufacture and increased volume production of power devices has been recognized and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government’s target of secure and stable semiconductor supply. ROHM and Toshiba Electronic Devices & Storage will respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices, effectively enhance their supply capabilities, and complementally utilize other party’s production capacity.

Power devices are essential components for supplying and managing power supply in all kinds of electronic equipment, and for achieving a carbon-free, carbon-neutral society. Current demand is expected to see continued growth. In automotive applications, development of more efficient, smaller, and lighter electric powertrains has advanced alongside the rapid expansion in vehicle electrification. In industrial applications, stable supply of power devices and improved characteristics are widely required to support increasing automation and higher efficiency requirements.
06.12.2023 14:00 ROHM Offers the Industry’s Largest* Library of LTspice® Models at Over 3,500 by Adding SiC and IGBTs
Willich-Münchheide, Germany, December 06, 2023 – ROHM has expanded the library of SPICE model lineup for LTspice of its circuit simulator. LTspice is equipped with circuit diagram capture and waveform viewer functions that make it possible for designers to check and verify in advance whether the circuit operation has been achieved as designed. In addition to the existing lineup of bipolar transistors, diodes, and MOSFETs, ROHM has added SiC power devices and IGBTs that increases its number of LTspice models to more than 3,500 for discretes (which can be downloaded from product pages). This brings the amount of coverage of LTspice models on ROHM’s website to over 80% of all products - providing greater convenience to designers when using circuit simulators that incorporate discrete products, now including power devices.
29.11.2023 14:00 ROHM’s New High Power 120W Laser Diode for LiDAR: Increasing Measurement Range by Reducing Wavelength Temperature Dependence by 66%
Willich-Münchheide, Germany, November 29, 2023 – ROHM has developed a high-power laser diode – the RLD90QZW8. It is ideal for industrial equipment and consumer applications requiring distance measurement and spatial recognition.
08.11.2023 14:00 ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices
Willich-Münchheide, Germany, Novemver 08, 2023 – ROHM has developed a gate driver IC – the BD2311NVX-LB. It is optimized for GaN devices and achieves gate drive speeds on the order of nanoseconds (ns) – ideal for high-speed GaN switching. This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance. The result: fast switching with a minimum gate input pulse width of 1.25ns that contributes to smaller, more energy efficient, higher performance applications.
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