| Press Releases 1 to 6 of 1852 |
 |
| 15.07.2026 14:15 |
Infineon introduces RIC70115 radiation-hardened GaN HEMT driver for satellite and high-reliability space applications |
|
Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms without compromising safe operation across varying bias voltage conditions. As the New Space economy continues to scale and satellite constellations grow in complexity and number, demand for rad hard power components that support the transition from silicon to GaN is increasing. |
|
|
| 13.07.2026 08:15 |
Infineon and LS ELECTRIC collaborate to advance high-efficiency direct current power solutions for AI data centers |
|
– Collaboration focuses on power conversion systems for energy storage, solid-state transformers and solid-state circuit breakers
– Infineon's semiconductors help enhance efficiency, performance and reliability of DC power infrastructure systems
Seoul, Korea – 13 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and LS ELECTRIC have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency direct current (DC) power infrastructure solutions for AI data centers and next-generation power grids. |
|
|
| 08.07.2026 10:15 |
Infineon supplies SiC technology to ADVANTICS, enhancing efficiency in power converters for megawatt charging |
|
Munich, Germany – 8 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will supply CoolSiC™ MOSFETs 1200 V and matching dual-channel EiceDRIVER™ 2EDB9259Y gate drivers to ADVANTICS, a technology leader in silicon carbide (SiC) power electronics and advanced control systems, for its new line of liquid-cooled power converters. The solutions enhance efficiency, power density and reliability in applications such as megawatt charging systems (MCS) for heavy-duty vehicles and vessels, as well as energy storage systems and DC microgrids for data centers. The collaboration helps address the need for faster charging, robust grid infrastructure and more efficient power conversion. |
|
|
| 07.07.2026 10:15 |
Infineon launches SECORA™ ID Key S USB, a new security solution supporting FIDO2 and PKI for secured logical access |
|
Munich, Germany – 07 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching the SECORA™ ID Key S USB, a Java Card™-based solution with USB and NFC connectivity for secured authentication and digital signatures. As the first FIDO-certified Level 3+ solution and compliant with CTAP 2.1, the authenticator enables phishing-resistant, passwordless authentication as well as protection against remote software and local hardware attacks. It includes preloaded applets for FIDO authentication, qualified digital signature creation, and PKI functions, while offering comprehensive customization options. Built on Infineon’s innovative system-in-package ID Key S USB hardware platform combined with an open Java Card environment, the end-to-end solution provides maximum flexibility, allowing customers to develop, migrate, and deploy proprietary applets. This supports additional use cases such as physical access, crypto wallets, and software rights management, addressing the needs of enterprises, financial institutions, and government applications. |
|
|
| 07.07.2026 07:00 |
US International Trade Commission’s (US ITC) determination confirmed, banning Innoscience’s patent-infringing GaN products from U.S. market |
|
Munich, Germany – 07 July 2026 – The Final Determination issued by the Full Commission of the U.S. International Trade Commission (US ITC) on 7 May 2026 is upheld after the conclusion of the Presidential Review Period. This confirms that Innoscience infringes an Infineon patent concerning GaN technology, resulting in import and sales bans against Innoscience. |
|
|
| 03.07.2026 15:30 |
Infineon wins another patent infringement case against Innoscience |
|
Munich, Germany – 03 July 2026 – The District Court Munich, Germany (Landgericht München I), today ruled in favor of Infineon Technologies in another patent infringement case concerning gallium nitride (GaN) technology between Infineon and Innoscience. |
|
|
| |
««
«
1
2
3
4
5
»
»»
|
|
|
|
|
|
