| Press Releases 1 to 6 of 1700 |
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| 29.04.2025 10:00 |
Digital umbrella warns of natural hazards: Infineon and startup GMD deploy sensors in the Alps |
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Munich, Germany – 29 April 2025 – In collaboration with Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), startup Geomorphing Detection (GMD®) has developed a system that uses radar sensors to continuously monitor streams and rock movements in the Alps. The innovation has the potential to reduce the impact of extreme weather and climate-related events and protect people and infrastructure. |
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| 24.04.2025 14:15 |
XENSIV™ 4th generation of magnetic switches supports functional safety up to ASIL B in automotive applications |
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Munich, Germany – 24 April 2025 – When developing applications for autonomous driving, compliance with the ISO 26262 standard is crucial – at both the system and sensor levels. To meet these demands, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the XENSIV™ TLE4960x magnetic switch family. Developed in accordance with ISO 26262, the TLE4960x switches integrate diagnostic functions to support functional safety applications with requirements up to ASIL B. They are the only ASIL-B-compliant switches on the market that can address a wide range of automotive applications, including window regulators, sunroof actuators, and seat adjustment. In addition, the devices are AEC-Q100 compliant and qualified to Grade 0, ensuring robust performance in harsh environments. |
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| 23.04.2025 10:15 |
Infineon at PCIM Europe 2025: Driving decarbonization and digitalization with innovative semiconductor solutions |
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Munich, Germany – 23 April 2025 – At PCIM Europe 2025 in Nuremberg, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will showcase its latest semiconductor, software and tooling solutions that help to solve today’s green and digital transformation challenges. At booth #470 in hall 7, the company will present highlights from its extensive power device portfolio, covering all relevant power technologies spanning silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Under the motto “Driving decarbonization and digitalization. Together”, Infineon will offer numerous demonstrations and presentations as well as the opportunity to talk to its experts. |
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| 22.04.2025 10:45 |
Infineon and Marelli enter new era of automotive cockpit design with MEMS laser beam scanning at 2025 Auto Shanghai |
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Munich, Germany – 22 April 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a global semiconductor leader in power systems and IoT, and Marelli, a world-leading automotive systems manufacturer, are partnering to advance automotive display technology with an innovative MEMS laser beam scanning (LBS) system. Based on Infineon’s LBS technology, this solution enables Marelli to create immersive cockpit experiences free from the constraints of traditional displays. This cutting-edge technology will be showcased at Marelli's booth during Auto Shanghai 25. |
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| 16.04.2025 10:15 |
Infineon introduces new generation of powerful and energy-efficient IGBT and RC-IGBT devices for electric vehicles |
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Munich, Germany – 16 April 2025 – The market for electric vehicles continues to gather pace with a strong volume growth of both battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs). The share of electric vehicles produced is expected to see double-digit growth by 2030 with a share of around 45 percent compared to 20 percent in 2024 [1]. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications. |
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| 14.04.2025 11:15 |
Infineon launches world’s first industrial gallium nitride (GaN) transistor product family with integrated Schottky diode |
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Munich, Germany – 14 April 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN™ Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the power stage design and reduces BOM cost. |
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