| Press Releases 1 to 6 of 1710 |
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| 08.05.2025 14:15 |
Infineon SEMPER™ NOR Flash memory family achieves ASIL-D functional safety certification |
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Munich, Germany – 8 May, 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that SGS-TÜV has certified Infineon’s industry-leading SEMPER™ NOR Flash memory to ASIL-D, the highest certification level for functional safety. Following a detailed analysis of product safety documentation under the ISO 26262:2018 standard, external experts from this leading assurance organization have validated that SEMPER devices meet the most stringent safety performance targets for automotive applications. |
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| 08.05.2025 07:45 |
German government issues final funding approval for new Infineon fab in Dresden |
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Munich/Dresden – 7 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs and Climate Action (BMWK). Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs. This figure does not include additional jobs which will be generated in the investment's ecosystem: Experts expect a positive job effect of 1:6. In addition, Infineon is also investing in Dresden through its participation in the joint venture "European Semiconductor Manufacturing Company (ESMC) GmbH". |
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| 08.05.2025 07:35 |
Revenue growth in the second quarter confirms expected economic recovery. Tariff disputes lead to uncertainty in the second half of the fiscal year accompanied by negative currency effects |
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Neubiberg, 8 May 2025 – Today, Infineon Technologies AG is reporting results for the second quarter of the 2025 fiscal year (period ended 31 March 2025). |
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| 07.05.2025 10:15 |
Infineon OptiMOS™ 6 80V MOSFET sets new benchmark in DC-DC power conversion efficiency in leading AI server platform |
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Munich, Germany – 7 May 2025 – As graphics processing units (GPUs) keep getting more powerful, so do the power requirements at the board level. Intermediate bus converters (IBCs) – which convert for example a 48 V input voltage to a lower bus voltage – are becoming more important for energy efficiency, power density, and thermal performance in AI data centers. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced that its OptiMOS™ 6 80V power MOSFETs in a compact 5x6 mm² dual side cooling (DSC) package have been integrated into the IBC stage of an AI server platform of a leading processor manufacturer. Application tests show an efficiency increase of around 0.4 percent compared to previously used solutions, corresponding to a saving of around 4.3 W per kW of load. At the system level, this leads to significant energy savings when scaled across server racks or entire data centers. For instance, scaling this across a hypothetical hyperscale data center with 2,000 racks would result in over 1.2 MWh in energy savings every hour – the equivalent energy needed to charge 25 small electric vehicles. The implications of this development are substantial, with cost savings and reduced carbon footprint for data center operators. |
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| 06.05.2025 10:15 |
Accelerating electric vehicle adoption and industrial efficiency: Infineon's SiC superjunction technology sets new standards |
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Munich, Germany – 6 May 2025 –Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has been a pioneer in the market introduction of silicon carbide (SiC) power devices and trench technology for SiC MOSFETs, combining excellent performance with high robustness. Today, the CoolSiC™ product offering spans from 400 V to 3.3 kV and covers a broad range of applications, including automotive drivetrains, EV charging, solar energy systems, energy storage, and high-power traction inverters. Building on a solid track record in SiC business development and leveraging its position as the innovator of charge-compensating devices in silicon (CoolMOS™), Infineon is now introducing a trench-based SiC superjunction (TSJ) technology concept. |
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| 05.05.2025 10:15 |
Infineon introduces new CoolSiC™ JFET technology for smarter and faster solid-state power distribution |
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Munich, Germany – 5 May 2025 – To enable the next generation of solid-state power distribution systems, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its silicon carbide (SiC) portfolio with the new CoolSiC™ JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches. |
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