| Press Releases 1 to 6 of 1894 |
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| 04.11.2026 09:30 |
Infineon redefines real-time compute and control for software-defined vehicles and Physical AI with new AURIX™ RC1 |
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– Fundamentally new automotive microcontroller platform is Infineon’s first to leverage the open-standard instruction set architecture RISC-V
– Platform simplifies development of software-defined vehicles by providing one common, highly scalable microcontroller basis across domains instead of point solutions
– High-end product lineup within the family will extend microcontroller domain with additional microprocessor capabilities to support further integration of functions
– Advanced processing, safety, cybersecurity, and integrated networking capabilities provide future-ready foundation for evolving requirements throughout vehicle lifecycles
– Complementing software ecosystem reduces migration efforts and accelerates software development for customers
Munich, Germany – 4 November 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is taking a strategic step forward to expand its portfolio for software-defined vehicles (SDV) as well as other software-defined (SDX) and Physical AI applications, reinforcing its position as global market leader in microcontrollers (MCU). The company is introducing a fundamentally new MCU platform within its industry-leading AURIX™ series for real-time control in automotive and beyond. AURIX RC1 is Infineon’s first MCU platform that leverages the benefits of RISC-V. Scaling from traditional microcontrollers to hybrid microcontroller/microprocessor devices, it provides a new level of power-efficient real-time intelligence to enable safe and secured future SDV, SDX and Physical AI. Infineon will present the AURIX RC1 family concept at the electronica trade fair in Munich, Germany (10-13 November) and targets to provide samples in the first half of 2027. |
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| 03.11.2026 10:15 |
Infineon launches OptiMOS™ 7 40 V MOSFETs to improve efficiency and power density in AI server and telecom power conversion |
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Munich, Germany – 03 November 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching its OptiMOS™ 7 40 V switching-optimized power MOSFET portfolio for AI servers, data centers and telecom infrastructure. Designed for high-frequency DC-DC power conversion, the devices help designers improve efficiency and power density in space-constrained systems. Target applications include low-voltage secondary-side stages of high-voltage intermediate bus converters in emerging 800 V DC architectures and intermediate bus converters in 48 V power architectures, with switching frequencies beyond 1 MHz supported in suitable topologies. |
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| 02.11.2026 14:30 |
Infineon enables car computers for automated driving and digital cockpits powered by Qualcomm Snapdragon Ride |
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Munich, Germany – 2 November 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced today that it is working with Qualcomm Technologies, Inc. to accelerate the development and deployment of central car computers in software-defined vehicles (SDVs). The companies have signed a technology agreement to have a microcontroller-based design pattern (the “subsystem”) for Qualcomm Technologies’ Snapdragon Ride™ reference platforms for high-performance computing and in-vehicle artificial intelligence. By working together, they expand the Snapdragon Ride ecosystem, bringing together Qualcomm Technologies’ platform capabilities and high-performance systems-on-chip (SoCs) with Infineon’s expertise in hardware and software for safety management, connectivity and memory management. Combined, these aim to provide a streamlined path for the deployment of car computers that combine driver assistance and automated driving functions with cutting-edge cockpit solutions. |
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| 27.10.2026 07:45 |
Infineon to establish the world’s first high-volume manufacturing facility for gallium nitride power semiconductors on 300-millimeter wafers in Europe |
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Munich, Germany/Vienna, Austria – 27 October 2026 – Infineon Technologies AG is establishing the world’s first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafers in Europe. As part of the project, Infineon will invest around €1.1 billion in its existing cleanroom facilities at the Villach site by 2034. Leveraging both the existing and upgraded infrastructure will enable highly efficient and cost-effective expansion of manufacturing capacity. Production is scheduled to start by the end of 2027. Infineon’s investment addresses the rapidly growing demand for high-performance power supply solutions. Gallium nitride enables significant efficiency gains in numerous applications, such as AI data centers, energy infrastructure, e-mobility, robotics and consumer electronics. |
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| 26.10.2026 13:15 |
Infineon and Enphase Energy announce world’s first 900 V GaN BDS devices for solid-state transformers in AI data centers |
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Munich, Germany – 26 October 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will supply the world’s first 900 V gallium nitride (GaN) monolithic bidirectional switches (BDS) to Enphase Energy, Inc. (NASDAQ: ENPH), a global energy technology company, for deployment in its solid-state transformer (SST) power modules. By extending the operating voltage range of GaN technology to 900 V while maintaining its high-frequency switching characteristics, the devices enable highly efficient, compact power conversion architectures for emerging applications including AI data centers. |
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| 22.10.2026 14:15 |
UnternehmerTUM Accelerator, Microsoft, Infineon Technologies, and NVIDIA Launch Physical AI Growth Lab for Europe's Most Promising Startups |
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Munich, Germany – 22 October 2026 – UnternehmerTUM Accelerator, Microsoft, Infineon, and NVIDIA, today launched the Physical AI Growth Lab, an equity-free accelerator for Europe's most promising physical AI, robotics, and industrial AI startups. Running from January to April 2027, the program combines expertise, infrastructure, capital access, and enterprise networks to help founders scale. |
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