| Press Releases 7 to 12 of 1804 |
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| 19.02.2026 16:10 |
Infineon Annual General Meeting approves stable dividend of €0.35 per share / Management Board and Supervisory Board discharged by large majority |
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Munich, Germany – 19 February 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has successfully held its 26th Annual General Meeting. The event took place in person in Munich and was also broadcast publicly on the company’s website. |
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| 19.02.2026 09:15 |
Infineon to extend contracts of CEO Jochen Hanebeck and CFO Dr. Sven Schneider ahead of schedule |
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Neubiberg, Germany – 19 February 2026 – Infineon Technologies AG plans to extend the contracts of Chief Executive Officer Jochen Hanebeck and Chief Financial Officer Dr. Sven Schneider ahead of schedule. Jochen Hanebeck’s contract is to be extended until the end of March 2032, while Dr. Sven Schneider’s contract is to run until the end of April 2032. Without the planned extension, the contracts would have expired on 1 April 2027 and 1 May 2027, respectively. The Supervisory Board will pass the formal resolution in May. |
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| 16.02.2026 10:15 |
Infineon and BMW Group join forces to shape the future of software-defined vehicles with the Neue Klasse |
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– Infineon plays an important role in the innovative architecture of BMW Group’s Neue Klasse with components for central computing, high-speed connectivity, efficient power management and distribution
– Centralized computing delivers faster processing and lower latency, allowing smoother handling, extended range, and improved updateability
– Zonal design reduces wiring by 600 meters and improves efficiency by approximately 20 percent via smart power distribution
Munich, Germany – 16 February 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) plays an important role in shaping the software-defined vehicle architecture of BMW Group’s Neue Klasse, a platform that redefines individual mobility by combining electrification, digitalization, and sustainability. By delivering an integrated, flexible, and future-ready electrical/electronic (E/E) architecture, the Neue Klasse lays an innovative foundation for safer, smarter, and more sustainable mobility solutions. Infineon solutions enable powerful and dependable computing, high-speed data connectivity and smart and efficient power management. Showcasing a BMW iX3, the first model of the Neue Klasse, at the Annual General Meeting (19 February), Infineon will demonstrate these contributions to its shareholders. |
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| 10.02.2026 11:31 |
Infineon successfully places €2 billion in bonds to refinance upcoming maturities and recent acquisitions |
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Munich, Germany – 10 February 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has successfully placed corporate bonds with a volume of €2 billion under its European Medium Term Notes (EMTN) program. The placement was several times oversubscribed and consists of three tranches with different maturities. The transaction enables Infineon to refinance upcoming maturities in fiscal year 2026. It will also help to refinance the EUR bank loans assumed in the context of the acquisition of Marvell’s Automotive Ethernet business and to finance the planned acquisition of ams OSRAM’s non-optical analog/mixed-signal sensor portfolio. |
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| 10.02.2026 10:15 |
Infineon GaN Insights 2026: Technology innovations providing the pathway to surging GaN growth in power semiconductors |
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– Gallium nitride (GaN) market to reach $3 billion by 2030, growing at 44% CAGR
– Infineon's high-voltage GaN bidirectional switches feature a revolutionary common drain design with a double gate structure
– GaN power semiconductors enter new markets, including AI, robotics, and quantum computing
Munich, Germany – 10 February 2026 – The power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies (FSE: IFX / OTCQX: IFNNY), a global leader in power semiconductors and IoT, has published the 2026 edition of its annual GaN Insights, providing valuable awareness into the world of GaN technology, its applications, and future prospects. |
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| 09.02.2026 08:15 |
Infineon's Silicon Carbide Power Semiconductors Selected for TOYOTA's New “bZ4X” |
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Munich, Germany and Tokyo, Japan – 9 February 2026 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY) today announced that CoolSiC™ MOSFETs (silicon carbide (SiC) power MOSFETs) have been adopted in the new bZ4X model from Toyota, the world's largest automaker. Integrated into the on-board charger (OBC) and DC/DC converter, the SiC MOSFETs leverage the material's advantages of low losses, high thermal resistance, and high voltage capability to help extend driving range and reduce charging time. |
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