| Press Releases 7 to 12 of 1833 |
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| 02.06.2026 10:15 |
Infineon introduces EiceDRIVER™ 2EDL90xG3 common footprint gate driver for silicon and GaN designs in AI datacenter applications |
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Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the EiceDRIVER™ 2EDL90xG3, a 120 V common footprint gate driver designed to enable silicon (Si) and gallium nitride (GaN) power designs on the same PCB. As AI datacenters scale to higher power densities, the ability to evaluate and transition between silicon and GaN solutions without PCB redesign is becoming increasingly important for power system engineers. The 2EDL90xG3 addresses this need directly, supporting 48 V and high-voltage intermediate bus converter (HV IBC) applications while eliminating design overhead during technology evaluation. A unique 5 V gate clamp feature further simplifies GaN gate driver power supply design and contributes to improved system efficiency. |
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| 02.06.2026 10:15 |
Infineon expands CoolSiC™ JFET portfolio with normally-off variants for AI data centers and industrial applications |
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Munich, Germany – 2 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its CoolSiC™ JFET portfolio in response to growing demand from AI data centers and the shift towards solid-state power protection. With new devices, package options and configurations, the company aims to support high-performance power distribution and protection systems. The first 750 V and 1200 V CoolSiC™ JFET devices in Q-DPAK packages, introduced last year, are now entering mass production. At PCIM Europe 2026, Infineon will present additional package options and normally-off variants, further strengthening its discrete portfolio for applications such as solid-state circuit breakers (SSCBs), battery disconnect switches and power distribution architectures in AI data centers, including power supply units (PSUs), power backup units (PBUs) and intermediate bus converter (IBC) hot-swap and eFuse designs. |
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| 02.06.2026 10:15 |
Infineon pushes AI data center power supply units (PSU) to 30 kW with two new high-efficiency server power solutions |
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Munich, Germany – 02 June 2026 – Artificial intelligence workloads are redefining the power requirements of modern data centers. Rapidly increasing GPU power levels and denser rack configurations are pushing server power infrastructure to its limits. To address these challenges, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces two system-level solutions targeting server ODMs and OEMs: an 18 kW three-phase power supply unit (PSU) reference design optimized for 50 V rack architecture, and a 30 kW three-phase interleaved T-Type PFC evaluation board designed for 800 VDC or ±400 VDC rack architectures with power sidecar. Both solutions are part of Infineon's broad AI server power delivery portfolio, helping customers accelerate time-to-market while achieving higher rack power, improved efficiency, and better thermal performance. |
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| 02.06.2026 10:15 |
Infineon introduces industry-first 24 kW SiC-based battery backup unit reference design for high-voltage AI data center architecture |
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Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a 24 kW battery backup unit (BBU) DC-DC reference design for high-voltage (HV) DC bus architectures in artificial intelligence (AI) data centers. The design is the first of its kind to operate directly from a battery stack to an 800 V DC bus, using 650 V and 1200 V silicon carbide (SiC) technology. It achieves a power density of 450 W/in³ and efficiency exceeding 99 percent within the same physical form factor as current low-voltage (LV) BBU implementations, addressing a key infrastructure bottleneck as data centers transition to higher-voltage DC distribution. |
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| 29.05.2026 10:45 |
Infineon sets new benchmark for electric vehicle inverters and introduces first silicon carbide power module operating at 205°C |
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Munich, Germany – 29 May 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has achieved a new milestone in power modules for electric vehicle inverters: The company is introducing a new 1300 V silicon carbide (SiC) module within the HybridPACK™ Drive family that is capable of continuous operation at temperatures up to 205 °C. Existing designs typically allow up to 175 °C. This increase enables automotive OEMs and Tier 1 suppliers to deliver higher peak and continuous output power from existing inverter designs or, in new designs, reduce system complexity and overall cost. |
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| 29.05.2026 03:15 |
Infineon Joins NVIDIA’s MGX™ AI Factory Ecosystem to Transform Power Delivery Architecture for Next-Generation AI Server Racks |
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Munich, Germany – May 29, 2026 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY), a leading provider of power systems and IoT, has joined NVIDIA’s MGX AI Factory ecosystem to help transform power delivery for next-generation AI data centers. Infineon’s power management solutions will support NVIDIA’s MGX™ architecture and 800 VDC power architecture, an open, modular reference architecture designed for AI factories in the agentic AI era. 800 VDC MGX™-compatible power racks help existing AI infrastructure scale AI compute performance and power density, creating an upgrade path for future AI infrastructure.
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