Press Releases 7 to 12 of 1800
10.02.2026 10:15 Infineon GaN Insights 2026: Technology innovations providing the pathway to surging GaN growth in power semiconductors
–    Gallium nitride (GaN) market to reach $3 billion by 2030, growing at 44% CAGR
–    Infineon's high-voltage GaN bidirectional switches feature a revolutionary common drain design with a double gate structure
–    GaN power semiconductors enter new markets, including AI, robotics, and quantum computing

Munich, Germany – 10 February 2026 – The power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies (FSE: IFX / OTCQX: IFNNY), a global leader in power semiconductors and IoT, has published the 2026 edition of its annual GaN Insights, providing valuable awareness into the world of GaN technology, its applications, and future prospects.
09.02.2026 08:15 Infineon's Silicon Carbide Power Semiconductors Selected for TOYOTA's New “bZ4X”
Munich, Germany and Tokyo, Japan – 9 February 2026 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY) today announced that CoolSiC™ MOSFETs (silicon carbide (SiC) power MOSFETs) have been adopted in the new bZ4X model from Toyota, the world's largest automaker. Integrated into the on-board charger (OBC) and DC/DC converter, the SiC MOSFETs leverage the material's advantages of low losses, high thermal resistance, and high voltage capability to help extend driving range and reduce charging time.
05.02.2026 11:15 Infineon launches its first isolated gate driver ICs with opto-emulator input supporting next-generation SiC applications
Munich, Germany – 05 February 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the EiceDRIVER™ 1ED301xMC12I product family, a series of high-performance isolated gate driver ICs with opto-emulator input. The devices are pin-compatible with existing opto-emulators and optocouplers, offering high common-mode transient immunity (CMTI), a robust output stage, and more precise timing than currently available solutions. This enables engineers to migrate to SiC technology without redesigning opto-based control schemes. The family is ideal for demanding applications where fast, reliable, and SiC-capable gate drivers are required, such as motor drives, solar inverters, electric-vehicle chargers, and energy-storage systems.
04.02.2026 07:33 Infineon makes a successful start to fiscal year 2026 and accelerates AI Investments in view of further increasing market dynamics
Neubiberg, Germany, February 4, 2026 – Infineon Technologies AG today reported results for the first quarter of fiscal year 2026, which ended on 31 December 2025.
03.02.2026 19:39 Infineon further strengthens its leading position in sensors and acquires non-optical analog/mixed-signal sensor portfolio from ams OSRAM
Munich, Germany – 3 February 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its sensor business with the acquisition of the non-optical analog/mixed-signal sensor portfolio from ams OSRAM Group (SIX: AMS). The two companies have entered into an agreement for a purchase price of €570 million on a debt-free and cash-free basis. With the planned investment, Infineon will strengthen its position as a leader in sensors for automotive and industrial markets through a complementary portfolio and expand its product range in medical applications.
20.01.2026 11:00 Infineon launches the next-generation of USB 2.0 peripheral controller with the EZ-USB™ FX2G3
Munich, Germany – 20 January 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is introducing the EZ-USB™ FX2G3, a next-generation USB 2.0 peripheral controller designed to deliver superior performance, robust security, and advanced power efficiency for USB devices. This new controller builds on the trusted EZ-USB™ FX2LP platform and offers a highly adaptable solution for industries requiring seamless and secure connectivity.
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