| Press Releases 7 to 12 of 1836 |
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| 02.06.2026 10:15 |
Infineon expands 750V CoolSiC™ portfolio with top-side-cooled H-DPAK half-bridge devices for enhanced system density and reliability |
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Munich, Germany – 02 June 2026 – Power conversion architectures in automotive and industrial applications are evolving rapidly, placing new demands on switching topologies, thermal management, and system integration. To address these requirements, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the H-DPAK, a new addition to its top-side cooling package family, housing integrated half-bridge (HB) devices in 750 V CoolSiC™ G2 technology. The 750V CoolSiC G2 brings the reliability margin what modern grids and energy systems demand. The H-DPAK integrates a complete unidirectional half-bridge power stage in a single package. A split lead frame design with optimized drain pads enhances heat spreading and ensures clearance compliance in dense, high-power board layouts, while matching the industry-standard 2.3 mm height of Infineon's established Q-DPAK and TOLT packages for seamless board-level integration. The result is a liquid cooling ready, scalable, drop-in-compatible solution that reduces parasitic loop inductance for cleaner fast switching, cuts passive component size, and delivers the proven performance of CoolSiC™ technology – including excellent RDS(on) x QOSS, best-in-class RDS(on) x Qfr, and superior robustness under avalanche, overload, and short-circuit conditions. |
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| 02.06.2026 10:15 |
Infineon launches industry-first silicon carbide bidirectional switch based on CoolSiC™ G2 technology |
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Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces silicon carbide (SiC) bidirectional switches (BDS) built on rugged 750 V CoolSiC™ G2 technology. A vertically integrated dual-die with common drain design in a top-side-cooled Q-DPAK package integrates two power switches into one for simplifying design and enable revolution of legacy topologies. While the available 650V CoolGaN BDS targets power density with high frequency, the 750V CoolSiC BDS delivers reliability margin what modern grids and energy systems demand resulting lowest Total Cost of Ownership during the application lifetime. |
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| 02.06.2026 10:15 |
Infineon’s EasyPACK™ S module and packaging concept enables compact designs for high-power-density applications |
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Munich, Germany – 2 June 2026 – The demand for higher power densities in increasingly space-constrained environments continues to grow, whether in on-board chargers for electric vehicles or power supplies for AI data centers. At PCIM Europe 2026, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces EasyPACK™ S, a compact power module and packaging concept specifically designed to meet these requirements. With a package height of only 5.6 mm and a footprint of around 33 x 36 mm², EasyPACK S enables significant system miniaturization while ensuring reliable thermal performance and reduced electromagnetic interference. The first modules available in the new package integrate Infineon’s CoolSiC™ MOSFETs 1200 V G2 as well as IGBT4 and IGBT7 1200 V technology. |
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| 02.06.2026 10:15 |
Infineon introduces EiceDRIVER™ 2EDL90xG3 common footprint gate driver for silicon and GaN designs in AI datacenter applications |
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Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the EiceDRIVER™ 2EDL90xG3, a 120 V common footprint gate driver designed to enable silicon (Si) and gallium nitride (GaN) power designs on the same PCB. As AI datacenters scale to higher power densities, the ability to evaluate and transition between silicon and GaN solutions without PCB redesign is becoming increasingly important for power system engineers. The 2EDL90xG3 addresses this need directly, supporting 48 V and high-voltage intermediate bus converter (HV IBC) applications while eliminating design overhead during technology evaluation. A unique 5 V gate clamp feature further simplifies GaN gate driver power supply design and contributes to improved system efficiency. |
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| 02.06.2026 10:15 |
Infineon expands CoolSiC™ JFET portfolio with normally-off variants for AI data centers and industrial applications |
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Munich, Germany – 2 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its CoolSiC™ JFET portfolio in response to growing demand from AI data centers and the shift towards solid-state power protection. With new devices, package options and configurations, the company aims to support high-performance power distribution and protection systems. The first 750 V and 1200 V CoolSiC™ JFET devices in Q-DPAK packages, introduced last year, are now entering mass production. At PCIM Europe 2026, Infineon will present additional package options and normally-off variants, further strengthening its discrete portfolio for applications such as solid-state circuit breakers (SSCBs), battery disconnect switches and power distribution architectures in AI data centers, including power supply units (PSUs), power backup units (PBUs) and intermediate bus converter (IBC) hot-swap and eFuse designs. |
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| 02.06.2026 10:15 |
Infineon pushes AI data center power supply units (PSU) to 30 kW with two new high-efficiency server power solutions |
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Munich, Germany – 02 June 2026 – Artificial intelligence workloads are redefining the power requirements of modern data centers. Rapidly increasing GPU power levels and denser rack configurations are pushing server power infrastructure to its limits. To address these challenges, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces two system-level solutions targeting server ODMs and OEMs: an 18 kW three-phase power supply unit (PSU) reference design optimized for 50 V rack architecture, and a 30 kW three-phase interleaved T-Type PFC evaluation board designed for 800 VDC or ±400 VDC rack architectures with power sidecar. Both solutions are part of Infineon's broad AI server power delivery portfolio, helping customers accelerate time-to-market while achieving higher rack power, improved efficiency, and better thermal performance. |
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