| Press Releases 1 to 6 of 1821 |
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| 28.05.2026 10:15 |
Infineon’s SECORA™ Connect X and SECORA™ Wallet brings secured contactless payment to smart wearables |
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Munich, Germany – 28 May 2026 – Contactless payment – a feature every modern smart watch and smart ring should offer – is fast, convenient, and secured. With up to 4 billion NFC-enabled devices expected by 2030, including up to 700 million wearables, the demand for contactless payment is growing rapidly. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces SECORA™ Connect X, a ready-to-integrate solution that enables customers to transform smart wearables into fully functional payment devices. Combined with Infineon's new SECORA Wallet and SECORA Token Requestor integrated to Mastercard® (MDES) and Visa® (VTS), it enables the digitization of cards and the creation of a custom-branded wallet app. This new SECORA one-stop-shop for wearable payment accelerates time-to-market through seamless integration and certification, while offering flexible design, card tokenization, and secured payment functionality for any active wearable. |
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| 26.05.2026 10:15 |
Infineon presents semiconductor solutions for power infrastructure, AI data centers, robotics and electromobility at PCIM Europe 2026 |
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Munich, Germany – 26 May 2026 – At PCIM Europe 2026 in Nuremberg, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will showcase its comprehensive semiconductor portfolio for future proof power infrastructure, AI data centers, robotics and electromobility. Located in hall 7, booth 470, the company will present a broad range of power system solutions spanning silicon (Si), silicon carbide (SiC) and gallium nitride (GaN) semiconductors, complemented by software, tools and cybersecurity expertise. |
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| 20.05.2026 12:45 |
Infineon CoolGaN™ BDS 40 V G3 family delivers up to 82 percent footprint reduction for portable power designs |
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Munich, Germany – 20 May 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its CoolGaN™ BDS 40 V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S. The new additions reduce PCB footprint by up to 82 percent and cut component count in half. For engineers designing within the strict spatial constraints of modern smartphones, notebooks, and wearables, this is a significant and quantifiable step forward. Targeting compact consumer devices, the new devices give power system designers greater flexibility to optimize efficiency and streamline designs without sacrificing performance. |
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| 20.05.2026 12:00 |
Infineon launches EU flagship project Moore4Power to drive the next generation of sustainable power electronics |
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Munich, Germany – 20 May 2026 – Today marks the official launch of Moore4Power (More than Moore for Disruptive Innovations in Power Electronics), one of Europe's most ambitious semiconductor R&D projects. Led by Infineon Technologies AG, a global leader in power semiconductors, this Chips Joint Undertaking initiative unites large entities, small and medium-sized enterprises and research institutes from 15 European countries to develop the next generation of smart, efficient and sustainable power electronics. With a total project volume of €91 million, Moore4Power will run for three years aiming to deliver breakthrough innovations that strengthen Europe's technological sovereignty and sustainability in the field of power electronics. |
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| 12.05.2026 10:15 |
Infineon collaborates with d-Matrix to optimize performance and power efficiency for interactive AI inferencing |
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Munich, Germany – May 12, 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced a collaboration with d-Matrix®, a pioneer in highly interactive, low-latency AI inference compute for data centers. Infineon’s power solutions help d-Matrix’s Corsair™ inference accelerator achieve industry-leading performance, energy efficiency, and system integration in their high-density boards. d-Matrix’s solution leverages the Infineon OptiMOS™ TDM2254xx dual-phase power modules, which enable true vertical power delivery and offer a high density of 1.0 A/mm². |
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| 11.05.2026 14:15 |
Infineon’s new XHP™ 2 CoolSiC™ high-power modules boost efficiency and power density in high-voltage energy systems |
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Munich, Germany – 11 May 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its XHP™ 2 power module portfolio with new variants incorporating CoolSiC™ MOSFETs 2300 V, designed for high-voltage power systems. The new 2300 V class devices support DC-link voltages of up to 1500 V, addressing the industry trend toward higher system voltages. The modules are available in several variants, offering on-resistance (RDS(on)) values ranging from 1 mΩ to 2 mΩ and isolation voltages of 4 kV or 6 kV. By leveraging silicon carbide (SiC) technology, the devices reduce both switching and conduction losses compared to conventional silicon-based solutions. This enables inverters to achieve higher efficiency and power density, or to operate at higher switching frequencies to reduce harmonics and system size. The new XHP 2 CoolSiC MOSFET modules are well suited for renewable energy applications, including wind, photovoltaic and battery storage systems. |
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