| 20.05.2026 12:45 |
Infineon CoolGaN™ BDS 40 V G3 family delivers up to 82 percent footprint reduction for portable power designs |
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Munich, Germany – 20 May 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its CoolGaN™ BDS 40 V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S. The new additions reduce PCB footprint by up to 82 percent and cut component count in half. For engineers designing within the strict spatial constraints of modern smartphones, notebooks, and wearables, this is a significant and quantifiable step forward. Targeting compact consumer devices, the new devices give power system designers greater flexibility to optimize efficiency and streamline designs without sacrificing performance. |
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| 20.05.2026 12:00 |
Infineon launches EU flagship project Moore4Power to drive the next generation of sustainable power electronics |
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Munich, Germany – 20 May 2026 – Today marks the official launch of Moore4Power (More than Moore for Disruptive Innovations in Power Electronics), one of Europe's most ambitious semiconductor R&D projects. Led by Infineon Technologies AG, a global leader in power semiconductors, this Chips Joint Undertaking initiative unites large entities, small and medium-sized enterprises and research institutes from 15 European countries to develop the next generation of smart, efficient and sustainable power electronics. With a total project volume of €91 million, Moore4Power will run for three years aiming to deliver breakthrough innovations that strengthen Europe's technological sovereignty and sustainability in the field of power electronics. |
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| 12.05.2026 10:15 |
Infineon collaborates with d-Matrix to optimize performance and power efficiency for interactive AI inferencing |
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Munich, Germany – May 12, 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced a collaboration with d-Matrix®, a pioneer in highly interactive, low-latency AI inference compute for data centers. Infineon’s power solutions help d-Matrix’s Corsair™ inference accelerator achieve industry-leading performance, energy efficiency, and system integration in their high-density boards. d-Matrix’s solution leverages the Infineon OptiMOS™ TDM2254xx dual-phase power modules, which enable true vertical power delivery and offer a high density of 1.0 A/mm². |
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| 11.05.2026 14:15 |
Infineon’s new XHP™ 2 CoolSiC™ high-power modules boost efficiency and power density in high-voltage energy systems |
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Munich, Germany – 11 May 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its XHP™ 2 power module portfolio with new variants incorporating CoolSiC™ MOSFETs 2300 V, designed for high-voltage power systems. The new 2300 V class devices support DC-link voltages of up to 1500 V, addressing the industry trend toward higher system voltages. The modules are available in several variants, offering on-resistance (RDS(on)) values ranging from 1 mΩ to 2 mΩ and isolation voltages of 4 kV or 6 kV. By leveraging silicon carbide (SiC) technology, the devices reduce both switching and conduction losses compared to conventional silicon-based solutions. This enables inverters to achieve higher efficiency and power density, or to operate at higher switching frequencies to reduce harmonics and system size. The new XHP 2 CoolSiC MOSFET modules are well suited for renewable energy applications, including wind, photovoltaic and battery storage systems. |
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| 11.05.2026 10:00 |
Infineon Startup Challenge 2026 puts humanoid robotics in the spotlight |
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Munich, 11 May 2026 – Infineon's Startup Challenge brings together promising founder teams and young high-tech companies from across the globe to work jointly on a highly relevant topic: humanoid robotics. The Challenge is a structured innovation program designed to develop technological concepts into market-ready applications. It is part of Infineon's global Co‑Innovation Program, in which Infineon drives innovation together with startups as a technology and development partner. |
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| 07.05.2026 23:50 |
U.S. International Trade Commission (ITC) rules in favor of Infineon and orders import and sales bans against Innoscience |
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Munich, Germany – 07 May 2026 – The Full Commission of the U.S. International Trade Commission (ITC) affirmed the ITC’s initial determination from December 2025 that Innoscience infringed an Infineon patent concerning gallium nitride (GaN) technology and ordered import and sales bans against Innoscience. The ITC Commission’s final decision and the bans are subject to a 60-day review period of the US President. |
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