| Press Releases 1 to 6 of 1833 |
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| 02.06.2026 10:15 |
Infineon extends XENSIV™ magnetic sensing portfolio with high-performance TMR technology |
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Munich, Germany – 02 June 2026 — Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its proven XENSIV™ magnetic sensing portfolio with a comprehensive range of Tunnel Magnetoresistance (TMR) sensors. Complementing the company's established Hall, GMR and AMR sensing solutions, the new TMR technology unlocks unique capabilities in magnetic sensing. TMR delivers exceptional sensitivity and a high signal-to-noise ratio (SNR), enabling accurate parameter retrieval and reliable sensing from smaller magnets without bandwidth limitations. Performance is maintained across larger airgaps and with increased mechanical tolerances. This makes TMR sensors ideal for low power position sensing in gaming and HMI (Human-Machine Interface), health and lifestyle wearables, and for position and current sensing in automotive and industrial applications. |
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| 02.06.2026 10:15 |
Infineon introduces OptiMOS™ 8 100 V power MOSFETs for motor drives and battery protection applications |
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Munich, Germany – 02 June 2026 – Megatrends such as green mobility, robotics, and artificial intelligence are placing increasingly demanding requirements on power systems in terms of reliable load current handling. To address these challenges, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the OptiMOS™ 8 100 V power MOSFET technology, featuring application-specific optimizations for RDS(on) -driven applications such as motor control and battery protection. |
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| 02.06.2026 10:15 |
Infineon CoolSET™ SiP variants extend output power range to help designers meet EU energy efficiency regulations |
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Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces three new variants of the CoolSET™ System-in-Package (SiP), the ICE188LM, ICE189LM, and ICE180LM, extending the supported output power range and helping white goods manufacturers comply with increasingly stringent EU energy efficiency and standby power regulations. The CoolSET SiP integrates a high-voltage MOSFET with a PWM controller on the primary side, a synchronous rectification (SR) controller on the secondary side, reinforced galvanic isolation, and comprehensive protection functions in a single package. This level of integration reduces system losses, lowers component count, and simplifies the design of energy-efficient auxiliary power supplies for household appliances up to 150 W. |
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| 02.06.2026 10:15 |
Infineon expands 750V CoolSiC™ portfolio with top-side-cooled H-DPAK half-bridge devices for enhanced system density and reliability |
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Munich, Germany – 02 June 2026 – Power conversion architectures in automotive and industrial applications are evolving rapidly, placing new demands on switching topologies, thermal management, and system integration. To address these requirements, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the H-DPAK, a new addition to its top-side cooling package family, housing integrated half-bridge (HB) devices in 750 V CoolSiC™ G2 technology. The 750V CoolSiC G2 brings the reliability margin what modern grids and energy systems demand. The H-DPAK integrates a complete unidirectional half-bridge power stage in a single package. A split lead frame design with optimized drain pads enhances heat spreading and ensures clearance compliance in dense, high-power board layouts, while matching the industry-standard 2.3 mm height of Infineon's established Q-DPAK and TOLT packages for seamless board-level integration. The result is a liquid cooling ready, scalable, drop-in-compatible solution that reduces parasitic loop inductance for cleaner fast switching, cuts passive component size, and delivers the proven performance of CoolSiC™ technology – including excellent RDS(on) x QOSS, best-in-class RDS(on) x Qfr, and superior robustness under avalanche, overload, and short-circuit conditions. |
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| 02.06.2026 10:15 |
Infineon launches industry-first silicon carbide bidirectional switch based on CoolSiC™ G2 technology |
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Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces silicon carbide (SiC) bidirectional switches (BDS) built on rugged 750 V CoolSiC™ G2 technology. A vertically integrated dual-die with common drain design in a top-side-cooled Q-DPAK package integrates two power switches into one for simplifying design and enable revolution of legacy topologies. While the available 650V CoolGaN BDS targets power density with high frequency, the 750V CoolSiC BDS delivers reliability margin what modern grids and energy systems demand resulting lowest Total Cost of Ownership during the application lifetime. |
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| 02.06.2026 10:15 |
Infineon’s EasyPACK™ S module and packaging concept enables compact designs for high-power-density applications |
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Munich, Germany – 2 June 2026 – The demand for higher power densities in increasingly space-constrained environments continues to grow, whether in on-board chargers for electric vehicles or power supplies for AI data centers. At PCIM Europe 2026, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces EasyPACK™ S, a compact power module and packaging concept specifically designed to meet these requirements. With a package height of only 5.6 mm and a footprint of around 33 x 36 mm², EasyPACK S enables significant system miniaturization while ensuring reliable thermal performance and reduced electromagnetic interference. The first modules available in the new package integrate Infineon’s CoolSiC™ MOSFETs 1200 V G2 as well as IGBT4 and IGBT7 1200 V technology. |
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