Press Releases 1189 to 1194 of 1725
10.01.2013 12:00 Research Project "SeManTiK" Investigates Latest Chip-Integration Technologies for Contactless Identity Documents
Neubiberg and Berlin, Germany – January 10, 2013 – What are the requirements for electronic identity documents to provide reliable functionality during their long term of validity? Experts from German printing office “Bundesdruckerei”, the semiconductor manufacturer Infineon Technologies AG and the ...
29.11.2012 15:25 Infineon Researchers Awarded German Prize for IT Security by Horst Goertz- Foundation: Innovative Encryption Scheme Increases Data Security of Electronic Access Controls
Neubiberg and Darmstadt, Germany - November 29, 2012 - Dr. Berndt Gammel, Dr. Wieland Fischer and Dr. Stefan Mangard of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) were today awarded the Horst Goertz Foundation's German Prize for IT Security. ...
14.11.2012 07:32 Infineon achieves revenue and earnings targets for the 2012 fiscal year despite headwinds; Management Board proposes an unchanged dividend of EUR 0.12 per share
Neubiberg, Germany - November 14, 2012 Infineon Technologies AG today reported results for the fourth quarter and the 2012 fiscal year, both ended September 30, 2012. ...
13.11.2012 10:15 New Generation of Magnetic Position Sensors from Infineon Improves Energy Efficiency and Reduces Operating Noise in BLDC Motor Control Applications
Neubiberg, Germany - November 13, 2012 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a new generation of Hall switches (TLE496x) and angle sensors (TLE5009 and TLE5012B) that enable more energy-efficient and compact design of brushless DC (BLDC) motor drives. BLDC motors, in comparison to conventional motors with brushes, provide greater efficiency, longer life cycles, more compact design, less noise and improved reliability. ...
12.11.2012 13:00 Infineon Redefines Best-in-Class IGBT Performance With 650V TRENCHSTOP 5; Switching Losses Reduced by More Than 60 percent
Neubiberg, Germany - November 12, 2012 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) releases the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) by introducing TRENCHSTOP 5. It features significantly lower conduction and switching losses compared to currently leading solutions. ...
08.11.2012 10:00 Infineon Extends its Market Leading CoolMOS MOSFET Portfolio, Introduces 600V P6 Product Family That Sets Benchmarks in Price/Performance Segment
Neubiberg, Germany - November 8, 2012 - Infineon Technologies AG introduces the new 600V CoolMOS P6 MOSFET product family, designed to enable higher system efficiency while being easy to use, the new products address the gap between technologies that focus on delivering ultimate performance ...
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