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    <title>Press Releases of MEXPERTS</title>
    <link>https://www.presseagentur.com/?lang=en</link>
    <description>The latest press releases of MEXPERTS AG</description>
	<language>en-US</language>
	<publisher>MEXPERTS AG</publisher>
	<creator>MEXPERTS AG (info@mexperts.de)</creator>
	<rights>Copyright 2010 MEXPERTS AG</rights>
    <date>2026-07-17T20:13+01:00</date>
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<item rdf:about="https://www.infineon.com/technology-news/2026/inftn202607-122">
	<title>Infineon introduces RIC70115 radiation-hardened GaN HEMT driver for satellite and high-reliability space applications</title>
	<link>https://www.infineon.com/technology-news/2026/inftn202607-122</link>
	<description>Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms without compromising safe operation across varying bias voltage conditions. As the New Space economy continues to scale and satellite constellations grow in complexity and number, demand for rad hard power components that support the transition from silicon to GaN is increasing.</description>
	<dc:date>2026-07-15T14:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/press-release/2026/infpr202607-121">
	<title>Infineon and LS ELECTRIC collaborate to advance high-efficiency direct current power solutions for AI data centers  </title>
	<link>https://www.infineon.com/press-release/2026/infpr202607-121</link>
	<description>–    Collaboration focuses on power conversion systems for energy storage, solid-state transformers and solid-state circuit breakers 
–    Infineon&#39;s semiconductors help enhance efficiency, performance and reliability of DC power infrastructure systems

Seoul, Korea – 13 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and LS ELECTRIC have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency direct current (DC) power infrastructure solutions for AI data centers and next-generation power grids.</description>
	<dc:date>2026-07-13T08:15+01:00</dc:date>
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<item rdf:about="https://www.presseagentur.com/rohm/detail.php?pr_id=7754&#38;lang=en">
	<title>ROHM Launches 600V Super Junction MOSFETs in Surface-Mount Package with High Thermal Performance</title>
	<link>https://www.presseagentur.com/rohm/detail.php?pr_id=7754&#38;lang=en</link>
	<description>Willich-Münchheide, Germany, July 09, 2026 – ROHM has developed a new lineup of 600V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series. </description>
	<dc:date>2026-07-09T14:00+01:00</dc:date>
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<item rdf:about="https://www.presseagentur.com/vector/detail.php?pr_id=7756&#38;lang=en">
	<title>Complete Solution for SOVD: Vector Simplifies the Move to Modern Vehicle Diagnostics</title>
	<link>https://www.presseagentur.com/vector/detail.php?pr_id=7756&#38;lang=en</link>
	<description>Stuttgart, July 8, 2026 – Vector, a leading solution provider for the development of software-defined systems, is introducing an end-to-end toolchain for Service-Oriented Vehicle Diagnostics (SOVD). The solution enables vehicle manufacturers and suppliers to efficiently test, evaluate, and integrate SOVD as a modern diagnostic approach into next-generation vehicle architectures. The SOVD toolchain is available now and is designed to support a fast and straightforward adoption of SOVD technology.</description>
	<dc:date>2026-07-08T14:00+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/technology-news/2026/ifxtn202607-120 ">
	<title>Infineon supplies SiC technology to ADVANTICS, enhancing efficiency in power converters for megawatt charging</title>
	<link>https://www.infineon.com/technology-news/2026/ifxtn202607-120 </link>
	<description>Munich, Germany – 8 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will supply CoolSiC™ MOSFETs 1200 V and matching dual-channel EiceDRIVER™ 2EDB9259Y gate drivers to ADVANTICS, a technology leader in silicon carbide (SiC) power electronics and advanced control systems, for its new line of liquid-cooled power converters. The solutions enhance efficiency, power density and reliability in applications such as megawatt charging systems (MCS) for heavy-duty vehicles and vessels, as well as energy storage systems and DC microgrids for data centers. The collaboration helps address the need for faster charging, robust grid infrastructure and more efficient power conversion.</description>
	<dc:date>2026-07-08T10:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/technology-news/2026/ifxtn202607-119">
	<title>Infineon launches SECORA™ ID Key S USB, a new security solution supporting FIDO2 and PKI for secured logical access</title>
	<link>https://www.infineon.com/technology-news/2026/ifxtn202607-119</link>
	<description>Munich, Germany – 07 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching the SECORA™ ID Key S USB, a Java Card™-based solution with USB and NFC connectivity for secured authentication and digital signatures. As the first FIDO-certified Level 3+ solution and compliant with CTAP 2.1, the authenticator enables phishing-resistant, passwordless authentication as well as protection against remote software and local hardware attacks. It includes preloaded applets for FIDO authentication, qualified digital signature creation, and PKI functions, while offering comprehensive customization options. Built on Infineon’s innovative system-in-package ID Key S USB hardware platform combined with an open Java Card environment, the end-to-end solution provides maximum flexibility, allowing customers to develop, migrate, and deploy proprietary applets. This supports additional use cases such as physical access, crypto wallets, and software rights management, addressing the needs of enterprises, financial institutions, and government applications.</description>
	<dc:date>2026-07-07T10:15+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/press-release/2026/ifxpr202607-118">
	<title>US International Trade Commission’s (US ITC) determination confirmed, banning Innoscience’s patent-infringing GaN products from U.S. market</title>
	<link>https://www.infineon.com/press-release/2026/ifxpr202607-118</link>
	<description>Munich, Germany – 07 July 2026 – The Final Determination issued by the Full Commission of the U.S. International Trade Commission (US ITC) on 7 May 2026 is upheld after the conclusion of the Presidential Review Period. This confirms that Innoscience infringes an Infineon patent concerning GaN technology, resulting in import and sales bans against Innoscience.</description>
	<dc:date>2026-07-07T07:00+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/press-release/2026/infxx202606-115">
	<title>Infineon wins another patent infringement case against Innoscience </title>
	<link>https://www.infineon.com/press-release/2026/infxx202606-115</link>
	<description>Munich, Germany – 03 July 2026 – The District Court Munich, Germany (Landgericht München I), today ruled in favor of Infineon Technologies in another patent infringement case concerning gallium nitride (GaN) technology between Infineon and Innoscience. </description>
	<dc:date>2026-07-03T15:30+01:00</dc:date>
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<item rdf:about="https://www.infineon.com/press-release/2026/ifxpr202607-117">
	<title>An impulse for Germany, Europe and the world: Infineon opens the world&#39;s largest fab for power semiconductors and analog/mixed-signal technologies in Dresden</title>
	<link>https://www.infineon.com/press-release/2026/ifxpr202607-117</link>
	<description>Dresden, 02 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opened the Smart Power Fab in Dresden several months ahead of schedule. The new plant, with an investment volume of five billion euros, is the largest single investment in Infineon&#39;s history and one of the largest investment projects in Germany, creating 1,000 new, direct jobs. The new fab doubles Infineon&#39;s manufacturing capacities at the Dresden site, thus creating the world&#39;s largest factory for intelligent power semiconductors and analog / mixed-signal technologies. </description>
	<dc:date>2026-07-02T13:15+01:00</dc:date>
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<item rdf:about="https://www.presseagentur.com/alps/detail.php?pr_id=7745&#38;lang=en">
	<title>APEM and Alps Alpine Europe strengthen collaboration to deliver next-generation industrial HMI solutions </title>
	<link>https://www.presseagentur.com/alps/detail.php?pr_id=7745&#38;lang=en</link>
	<description>Munich, Germany – July 02, 2026 – APEM SAS, part of the IDEC group, and Alps Alpine Europe GmbH have announced a strategic partnership in Europe, combining their complementary expertise to deliver advanced industrial HMI solutions to manufacturers facing growing demands for connectivity, automation, electrification, and improved operator ergonomics.</description>
	<dc:date>2026-07-02T10:00+01:00</dc:date>
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