Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the EiceDRIVER™ 2EDL90xG3, a 120 V common footprint gate driver designed to enable silicon (Si) and gallium nitride (GaN) power designs on the same PCB. As AI datacenters scale to higher power densities, the ability to evaluate and transition between silicon and GaN solutions without PCB redesign is becoming increasingly important for power system engineers. The 2EDL90xG3 addresses this need directly, supporting 48 V and high-voltage intermediate bus converter (HV IBC) applications while eliminating design overhead during technology evaluation. A unique 5 V gate clamp feature further simplifies GaN gate driver power supply design and contributes to improved system efficiency.
