Press Releases 85 to 90 of 1795
09.05.2025 10:15 Infineon and Visteon Collaborate on Advanced Power Conversion Systems for Next-Generation Electric Vehicles
San Jose, CA, and Van Buren Township, Michigan, USA – 9 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the leading provider of automotive semiconductors, and Visteon Corporation (NASDAQ: VC), a global leader in automotive cockpit electronics, today announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains.
08.05.2025 14:15 Infineon SEMPER™ NOR Flash memory family achieves ASIL-D functional safety certification
Munich, Germany – 8 May, 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that SGS-TÜV has certified Infineon’s industry-leading SEMPER™ NOR Flash memory to ASIL-D, the highest certification level for functional safety. Following a detailed analysis of product safety documentation under the ISO 26262:2018 standard, external experts from this leading assurance organization have validated that SEMPER devices meet the most stringent safety performance targets for automotive applications.
08.05.2025 07:45 German government issues final funding approval for new Infineon fab in Dresden
Munich/Dresden – 7 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs and Climate Action (BMWK). Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs. This figure does not include additional jobs which will be generated in the investment's ecosystem: Experts expect a positive job effect of 1:6. In addition, Infineon is also investing in Dresden through its participation in the joint venture "European Semiconductor Manufacturing Company (ESMC) GmbH".
08.05.2025 07:35 Revenue growth in the second quarter confirms expected economic recovery. Tariff disputes lead to uncertainty in the second half of the fiscal year accompanied by negative currency effects
Neubiberg, 8 May 2025 – Today, Infineon Technologies AG is reporting results for the second quarter of the 2025 fiscal year (period ended 31 March 2025).
07.05.2025 10:15 Infineon OptiMOS™ 6 80V MOSFET sets new benchmark in DC-DC power conversion efficiency in leading AI server platform
Munich, Germany – 7 May 2025 – As graphics processing units (GPUs) keep getting more powerful, so do the power requirements at the board level. Intermediate bus converters (IBCs) – which convert for example a 48 V input voltage to a lower bus voltage – are becoming more important for energy efficiency, power density, and thermal performance in AI data centers. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced that its OptiMOS™ 6 80V power MOSFETs in a compact 5x6 mm² dual side cooling (DSC) package have been integrated into the IBC stage of an AI server platform of a leading processor manufacturer. Application tests show an efficiency increase of around 0.4 percent compared to previously used solutions, corresponding to a saving of around 4.3 W per kW of load. At the system level, this leads to significant energy savings when scaled across server racks or entire data centers. For instance, scaling this across a hypothetical hyperscale data center with 2,000 racks would result in over 1.2 MWh in energy savings every hour – the equivalent energy needed to charge 25 small electric vehicles. The implications of this development are substantial, with cost savings and reduced carbon footprint for data center operators.
06.05.2025 10:15 Accelerating electric vehicle adoption and industrial efficiency: Infineon's SiC superjunction technology sets new standards
Munich, Germany – 6 May 2025 –Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has been a pioneer in the market introduction of silicon carbide (SiC) power devices and trench technology for SiC MOSFETs, combining excellent performance with high robustness. Today, the CoolSiC™ product offering spans from 400 V to 3.3 kV and covers a broad range of applications, including automotive drivetrains, EV charging, solar energy systems, energy storage, and high-power traction inverters. Building on a solid track record in SiC business development and leveraging its position as the innovator of charge-compensating devices in silicon (CoolMOS™), Infineon is now introducing a trench-based SiC superjunction (TSJ) technology concept.
  «« « 13 14 15 16 17 » »»
 
 
 
» Infineon Technologies
» Press Releases
» News by E-mail
Subscribe to our press
newsletter service for free
» News by RSS-Feed
Subscribe to the RSS-Feed
without any registration
» Contact Agency
MEXPERTS AG
Tel.: +49 (0)8143 59744-00
www.mexperts.de