| Press Releases 79 to 84 of 1768 |
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| 17.03.2025 15:15 |
Infineon partners with Enphase to enhance energy-efficiency and reduce MOSFET-related costs with 600 V CoolMOS™ 8 |
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Munich, Germany – 17 March 2025 – The 600 V CoolMOS™ 8 high-voltage superjunction (SJ) MOSFET product family from Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has allowed Enphase Energy, a global energy technology company and a leading supplier of microinverter-based solar and battery systems, to simplify its system design and reduce assembly costs. By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (RDS(on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device efficiency and boosts power density. In addition, the company achieved MOSFET related cost savings. |
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| 17.03.2025 10:15 |
Infineon introduces new E-version XDP™ hybrid flyback controller ICs for ultra-high power density designs |
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Munich, Germany – 17 March 2025 – Following the market launch of the industry's first PFC and hybrid flyback (HFB) combo IC, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is introducing the E-version of its hybrid flyback controller family. Designed for high-performance applications, the new XDP™ hybrid flyback digital controller family leverages the advanced asymmetrical half-bridge (AHB) topology, which combines the simplicity of a flyback converter with the efficiency of a resonant converter, enabling high power density designs. This makes the controllers ideal for various AC/DC applications, including aftermarket and OEM chargers, adapters, power tools, e-bike chargers, industrial switching power supplies, TV power supplies, and LED drivers. |
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| 14.03.2025 10:15 |
CoolSiC™ Schottky diode 2000 V now available in TO-247-2 package, enabling higher efficiency and simplifying designs |
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Munich, Germany – 14 March 2025 – Many industrial applications today are moving towards higher power levels with minimized power losses. One way to achieve this is to increase the DC link voltage. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is addressing this market trend with the CoolSiC™ Schottky diode 2000 V G5 product family, the first discrete silicon carbide diodes with a breakdown voltage of 2000 V, introduced in September 2024. The product portfolio has now been expanded to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product family fits perfectly for applications with DC link voltages up to 1500 VDC, making it ideal for solar and EV chargers. |
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| 13.03.2025 10:15 |
Infineon microcontrollers: Supporting developers with new affordable kits and robust development environments |
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Munich, Germany – 13 March 2025 – In the ever-evolving world of embedded systems, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) continues to support developers with sophisticated microcontroller solutions. The microcontroller families such as AURIX™, TRAVEO™ T2G, and PSOC™ Automotive, offer high performance, flexibility, and ease of use and are designed for a wide range of applications. To further support developers, Infineon introduces new affordable development kits and free integrated development environments (IDEs), supported by comprehensive software tools, tutorials, and an extensive ecosystem. |
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| 12.03.2025 15:15 |
Infineon extends its XDP™ digital protection product family with new 48 V hot swap controllers optimized for AI servers |
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Munich, Germany – 12 March 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its XDP™ digital protection product family with the XDP711-001, a 48 V wide input voltage range digital hot swap controller with a programmable safe operating area (SOA) control designed for high-power AI servers. The controller will provide superior input and output voltage monitoring and reporting of ≤0.4 percent and system input current monitoring and reporting of ≤ 0.75 percent accuracy at full ADC range, enhancing the system's fault detection and reporting accuracy. |
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| 12.03.2025 09:00 |
Infineon advances Powering AI roadmap with cutting-edge Battery Backup Unit (BBU) technology for AI data centers |
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Munich, Germany – 12 March 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced its roadmap for next-level Battery Backup Unit (BBU) solutions for uninterrupted operations of AI data centers to avoid power outages and the risk of data losses. The comprehensive BBU roadmap includes power solutions from 4 kW up to the world’s first 12 kW battery backup unit. The BBU solutions are designed to deliver highly efficient, reliable, and scalable power conversion in AI server racks, and achieve a power density up to 400 percent higher compared to industry average. |
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