| 20.05.2025 19:30 |
Infineon to revolutionize power delivery architecture for future AI server racks with NVIDIA |
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Munich, Germany and Santa Clara, CA – 20 May 2025 Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is revolutionizing the power delivery architecture required for future AI data centers. In collaboration with NVIDIA, Infineon is developing the next generation of power systems based on a new architecture with central power generation of 800 V high-voltage direct current (HVDC). The new system architecture significantly increases energy-efficient power distribution across the data center and allows power conversion directly at the AI chip (Graphic Processing Unit, GPU) within the server board. Infineon’s expertise in power conversion solutions from grid to core based on all relevant semiconductor materials silicon (Si), silicon carbide (SiC) and gallium nitride (GaN) is accelerating the roadmap to a full scale HVDC architecture. |
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| 20.05.2025 10:15 |
Infineon joins the board of directors of the FiRa® Consortium shaping the future of Ultra-wideband |
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Munich, Germany – 20 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has joined the board of directors of FiRa® (fine-ranging) Consortium. This marks a significant step in the company’s commitment to further shaping the future of Ultra-wideband (UWB) across a wide field of use cases and verticals. Having been an active contributor to FiRa since 2021, Infineon is now expanding its activities at the board level to further drive the evolution of UWB through standardization. UWB is the key technology for secured ranging, enabling numerous use cases while working hand in hand with other connectivity technologies and security solutions, thus driving digitalization. Additionally, Ultra-wideband can address several sensing use cases, such as presence detection. |
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| 19.05.2025 14:15 |
Infineon will supply Rivian's R2 Platform with power modules for electric vehicle traction inverters |
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Munich, Germany – 19 May, 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will supply Rivian’s R2 platform with power modules for traction inverters. The R2 platform will use silicon carbide (SiC) and silicon (Si) modules from Infineon’s HybridPACK™ Drive G2 family. Supply is expected to start in 2026. Additionally, Infineon will supply other products for the platform, including AURIX™ TC3x microcontrollers and power management ICs. |
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| 15.05.2025 15:50 |
Infineon gains approval of Science Based Targets initiative for ambitious CO2 emission reduction targets |
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Munich, Germany – 15 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has reached another milestone in its decarbonization efforts: The Science Based Targets initiative (SBTi) has approved the company's ambitious greenhouse gas emission reduction targets. The approval spans the company's own emissions (scope 1 and 2) as well as emissions along the supply chain (scope 3). The scope 1 and 2 goals are in line with the Paris Agreement to limit global temperature increase to 1.5° Celsius, meeting the most ambitious SBTi category for near-term CO2 reduction targets. In addition, Infineon has now set itself an official scope 3 target addressing the supply chain. Collaboration with suppliers is a fundamental part of Infineon's sustainability strategy; the Infineon procurement team is already actively working together with over a hundred suppliers on solutions that reduce CO2 emissions. |
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| 13.05.2025 10:15 |
PSOC™ 4100T Plus microcontroller offers advanced sensing capabilities and system control in a single chip |
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Munich, Germany – 13 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces PSOC™ 4100T Plus, an Arm® Cortex®-M0+ microcontroller (MCU) with Multi-Sense. The new microcontroller offers a rich blend of analog and digital capabilities, featuring 128K Flash, 32K SRAM, and Infineon’s high-performance Multi-Sense technology, which includes CAPSENSE™, inductive sensing and liquid level sensing. PSOC 4100T Plus also boasts enhanced reliability and is equipped with a range of enhancements and advanced sensing capabilities to form a complete solution for system control and human-machine interface (HMI) applications. |
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| 12.05.2025 11:15 |
Infineon introduces CoolGaN™ Bidirectional Switch 650 V G5 for enhanced efficiency and reliability in power systems |
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Munich, Germany – 12 May 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is introducing the CoolGaN™ Bidirectional Switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon's robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon's CoolGaN technology. The device serves as a highly efficient replacement for traditional back-to-back configurations commonly used in converters. |
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