Press Releases 1177 to 1182 of 1745
06.06.2013 13:10 Infineon Extends Circuit Protection Portfolio with Low Dynamic Resistance and Ultra-Low Capacitance TVS Devices for High-Speed Data Interfaces
Neubiberg, Germany - June 6, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a series of Transient Voltage Suppression (TVS) devices offering best-in-class protection against Electrostatic Discharge (ESD) for electronic systems. ......
06.06.2013 12:10 Change in Management in Corporate Communications at Infineon
Neubiberg, Germany - June 6, 2013 - Ralph Driever, Corporate Vice President Communications, is leaving Infineon Technologies AG effective June 30, 2013. Mr. Driever has been in charge of worldwide External and Internal Communications, as well as Marketing Communications, since 2008. ...

“I regret Ralph...
29.05.2013 10:10 Smart and Small: New Infineon 3D Image Sensor Chip Family Provides High Integration Touchless Gesture Control for Computers and Consumer Devices
Neubiberg and Siegen, Germany – May 29, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a family of 3D Image Sensor chips for implementation of touchless gesture recognition. Developed in cooperation with pmdtechnologies GmbH, the new chips are the first to combine a 3D im...
23.05.2013 13:40 Infineon Ships Security Chips to Taiwan’s Electronic Passport Program
Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that it is supplying security chips to Taiwan’s electronic passport program. Infineon is the only supplier and has started shipping security chips of the SLE78 product family based on the digital ...
23.05.2013 13:10 Infineon presents high-performance LNA for Global Navigation Satellite Systems; BGA825L6S increases satisfaction of smartphone users
Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced BGA825L6S, a highly cost-effective Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS). It features an ultra-low noise figure, high linearity, ...
22.05.2013 10:10 Infineon Enables Faster and More Cost-Effective Realization of ASIL C/D Designs for Hybrid and Electric Vehicle Subsystems; Announces Early Samples of EiceDRIVER™ SIL and EiceDRIVER™ Boost IGBT Drivers
Neubiberg, Germany - May 22, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its next generation of high-voltage IGBT gate drivers. Designed for the main inverter of hybrid and electric vehicles (HEV), the new EiceDRIVER™ SIL and the EiceDRIVER™ Boost drivers enable automotive system suppliers to more easily and more cost-effectively design HEV drivetrain subsystems that are compliant with ASIL C/D functional safety requirements (ISO 26262). ...
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