| 29.05.2013 10:10 |
Smart and Small: New Infineon 3D Image Sensor Chip Family Provides High Integration Touchless Gesture Control for Computers and Consumer Devices |
|
Neubiberg and Siegen, Germany – May 29, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a family of 3D Image Sensor chips for implementation of touchless gesture recognition. Developed in cooperation with pmdtechnologies GmbH, the new chips are the first to combine a 3D im... |
 |
|
| 23.05.2013 13:40 |
Infineon Ships Security Chips to Taiwan’s Electronic Passport Program |
|
Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that it is supplying security chips to Taiwan’s electronic passport program. Infineon is the only supplier and has started shipping security chips of the SLE78 product family based on the digital ... |
|
|
| 23.05.2013 13:10 |
Infineon presents high-performance LNA for Global Navigation Satellite Systems; BGA825L6S increases satisfaction of smartphone users |
|
Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced BGA825L6S, a highly cost-effective Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS). It features an ultra-low noise figure, high linearity, ... |
|
|
| 22.05.2013 10:10 |
Infineon Enables Faster and More Cost-Effective Realization of ASIL C/D Designs for Hybrid and Electric Vehicle Subsystems; Announces Early Samples of EiceDRIVER™ SIL and EiceDRIVER™ Boost IGBT Drivers |
|
Neubiberg, Germany - May 22, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its next generation of high-voltage IGBT gate drivers. Designed for the main inverter of hybrid and electric vehicles (HEV), the new EiceDRIVER™ SIL and the EiceDRIVER™ Boost drivers enable automotive system suppliers to more easily and more cost-effectively design HEV drivetrain subsystems that are compliant with ASIL C/D functional safety requirements (ISO 26262). ... |
|
|
| 14.05.2013 10:10 |
Infineon Introduces New TO-Leadless Package – Designed for High Current Applications up to 300A |
|
Neubiberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced the new TO-Leadless package offering reduced package resistance, significantly smaller size as well as improved EMI behavior. It contains the latest OptiMOS MOSFET generation for applications... |
|
|
| 14.05.2013 10:10 |
Infineon Showcases 650V TRENCHSTOP™ 5 – Performance of Best-in-Class IGBT Gains High Customer Demand |
|
Neubiberg, Nuremberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) highlights its 650V TRENCHSTOP™ 5 at the PCIM Europe 2013 in Nuremberg. Since the introduction of this next generation thin wafer IGBT (Insulated Gate Bipolar Transistor) in the autumn of 2012, the TRENCHSTOP™ 5... |
|
|
| |
««
«
195
196
197
198
199
»
»»
|
