| 22.06.2015 12:30 |
IGBT and Diode Function on Single Chip Deliver Enhanced Reliability for High-Performance Applications such as Traction and Industrial Drives |
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Munich, Germany – June 22, 2015 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC (Reverse Conducting IGBT with Diode Control) chip ... |
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| 09.06.2015 11:14 |
Infineon Heads Three Electromobility Research Projects to Facilitate More Electric Vehicles on Europe's Roads |
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Munich, Germany and Brussels, Belgium – June 9, 2015 – The European Commission is launching three new research projects aimed at making electromobility cheaper, more efficient and more reliable in order to facilitate more environmentally-friendly vehicles on Europe's roads. Europe will be the site... |
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| 02.06.2015 10:45 |
OptiMOS™ 300 V Offers High Efficiency and New Design Possibilities in Hard Switching Applications |
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Munich, Germany – June 2, 2015 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY) extends its medium voltage MOSFET portfolio with OptiMOSTM 300 V, setting a new standard in the Power MOSFET market. In doing so, the company confirms its position as market leader enabling energy efficient solutions in... |
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| 30.05.2015 09:15 |
Infineon and Google ATAP to Develop Advanced Radar Technology for Gesture Sensing and Presence Detection Applications |
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Munich, Germany – May 30, 2015 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that it is working with Google’s Advanced Technology and Projects group (ATAP) to develop a sensing solution. Potential applications include wearables, internet of things and automotive applications.
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| 19.05.2015 13:15 |
Infineon Launches new High-Power, Light-Triggered Thyristor with Industry’s First Integrated Protection Features |
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Munich, Germany – May 19, 2015 – Infineon Technologies Bipolar GmbH & Co. KG has further extended its family of bipolar semiconductors with an optically triggered thyristor that can improve the reliability, lower the system cost and simplify the design of ultra-high-power applications. Infineon’s ne... |
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| 19.05.2015 10:15 |
Infineon’s Next Generation CoolMOS™ Delivers 50 Percent Improved Switching Losses; EiceDRIVER™ is Setting New Standards in System Robustness |
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Munich, Germany - May 19, 2015 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a new family of CoolMOS™ C7 series superjunction (SJ) MOSFETs. The 600 V series offers a 50 percent reduction in turn-off losses compared to the CoolMOS™ CP, offering a GaN-like level of performance in ... |
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