Press Releases 1141 to 1146 of 1566
28.02.2011 10:20 Infineon Presents New ISOFACE Digital Input Product Family for Industrial Control and Automation Systems - Much Smarter and More Robust Than Today’s Solutions
Neubiberg, Germany - February 28, 2011 - The new ISOFACE™ Digital Input products expand Infineon Technologies’ innovative product segment of galvanic isolated interfaces for industrial control and automation applications. The ISOFACE™ Digital Input product family ISO1I811T and ISO1I813T ...
21.02.2011 11:25 Infineon Honored for Pioneering Ingenuity; Infineon Receives Innovation Award of German Industry for Security Technology "Integrity Guard"
Neubiberg, Germany - February 21, 2011 - Infineon Technologies received the Innovation Award of German Industry for the best technological innovation. In the category of large-scale enterprises the prestigious award went to Infineon’s "Integrity Guard" security technology. ...
17.02.2011 20:13 Wolfgang Mayrhuber unanimously elected new Supervisory Board Chairman
Neubiberg, Germany - February 17, 2011 - The Annual General Meeting of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), today appointed Wolfgang Mayrhuber, with 98.4 percent of the votes, as shareholder representative to the Supervisory Board. ...
17.02.2011 10:25 Annual General Meeting 2011 of Infineon Technologies AG in Munich/Germany
Infineon Annual General Meeting on February 17, 2011, 10.00 a.m. CET, ICM (Internationales Congress Center München), Munich/Germany. Speeches and Presentations are available at http://www.infineon.com/cms/en/corporate/press/  ...
17.02.2011 10:00 Infineon’s Supervisory Board Extends Management Board Contracts
Neubiberg, Germany, February 17, 2011 - The Supervisory Board of Infineon Technologies AG has extended the contracts of incumbent Management Board members Peter Bauer and Dr. Reinhard Ploss. The contract periods correspond to the duration of the Management Board members’ terms. ...
07.02.2011 10:00 Unique Success Story of CoolMOS Technology: Infineon launches 650V MOSFET with Integrated Fast Body Diode and crosses the 3.5 Billionth High-Voltage MOSFET to Advance Energy Efficiency Worldwide
Neubiberg, Germany - February 3, 2011 - On January 19, 2011, the 3.5 billionth CoolMOS high-voltage MOSFET came off the production line at the company’s manufacturing facility in Villach, Austria, making Infineon the world’s most successful supplier of these 500 to 900V transistors. ...
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