| 04.09.2025 09:30 |
ROHM’s SiC MOSFETs Adopted in Schaeffler’s Inverter Brick: Now in Mass Production |
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ROHM and Schaeffler, a leading German automotive supplier, have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC (silicon carbide) MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. |
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| 21.08.2025 14:00 |
ROHM Releases a New Compact PFC + Flyback Control Reference Design for Power |
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Willich-Münchheide, Germany, August 21, 2025 – ROHM’s new reference design (REF67004) is capable of controlling two commonly used power converter types in consumer and industrial power supply applications by using a single MCU: critical conduction mode PFC (Power Factor Correction) and quasi-resonant flyback. This is part of ROHM’s LogiCoA Power Supply Solution, that leverages analog-digital hybrid control technology. It combines an analog-controlled power stage circuit featuring ROHM’s superior silicon MOSFETs and gate driver ICs with a digitally managed power supply circuit built around the low-power LogiCoA MCU. |
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| 10.07.2025 14:00 |
ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed |
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Willich-Münchheide, Germany, July 10, 2025 – ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance. |
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| 08.07.2025 14:00 |
ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications |
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Willich-Münchheide, Germany, July 08, 2025 – ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0milliohm (typ.) in a compact 2.0mm × 2.0mm package. |
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| 01.07.2025 14:00 |
ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance |
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Willich-Münchheide, Germany, July 01, 2025 – ROHM has released of a 100V power MOSFET – RY7P250BM – optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market. |
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| 25.06.2025 14:00 |
ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices |
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Willich-Münchheide, Germany, June 25, 2025 – ROHM has developed an isolated gate driver IC - the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. |
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