| Press Releases 379 to 384 of 1806 |
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| 15.05.2023 10:15 |
Infineon to lead European research project on Industry 5.0 for more sustainability and resilience in European manufacturing |
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Munich, 15 May 2023 – Infineon Technologies AG is taking over coordination of the wide-scope European research project AIMS5.0 ("Artificial Intelligence in Manufacturing Leading to Sustainability and Industry 5.0"). Hardware and software-based Artificial Intelligence are to improve resource consumption in manufacturing and at the same time raise product quality. In addition, the objective is to improve resilience, optimize supply chains and time-to-market in order to boost the international competitive strength of Europe as a commercial location. |
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| 10.05.2023 10:15 |
Infineon’s CALYPSO™ move enables easily interoperable ticketing solutions based on open standards |
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Munich, Germany – May 10, 2023 – As cities grow, public transport operators must cope with ever-increasing numbers of passengers, especially during major events such as football matches and the Olympic Games. This, coupled with the need for sustainability and convenience, is creating a rapidly expanding market for digital ticketing and smart mobility. This transformation requires open standards that enable secured, convenient and interoperable ticketing solutions with the necessary transparency and trust. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) addresses this development with CALYPSO™ move, the first secured memory for simple contactless ticketing based on the Calypso® basic specification. It allows manufacturers to meet the specific requirements of each transport operator and authority, avoiding the use of magnetic stripes, barcodes and proprietary tickets. |
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| 09.05.2023 14:15 |
Infineon introduces the next generation of dual-channel isolated gate driver ICs, pushing the performance envelope of SMPS designs |
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Munich, Germany – 9 May, 2023 – Today’s 3.3 kW switched-mode power supplies (SMPS) can achieve power densities of 100 W/inch³ by utilizing the latest technologies, including superjunction (SJ silicon) and silicon carbide (SiC) power MOSFETs in the totem-pole PFC stage as well as gallium nitride (GaN) power switches for high-voltage DC-DC stage operation. Digital control of the PFC and DC-DC stages is essential for maximum efficiency and robustness, as is the use of optimum gate drive solutions. To meet the latest design and application needs, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the next generation of the EiceDRIVER™ product family of dual-channel galvanically isolated gate driver ICs. |
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| 09.05.2023 12:00 |
Infineon and Hon Hai Technology Group (Foxconn) sign MoU to partner on SiC collaboration and leverage respective expertise in EV development |
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Munich, Germany, and Taipei, Taiwan – 9 May 2023 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the global leader in automotive semiconductors, and Hon Hai Technology Group (“Foxconn”) (TWSE:2317), the world’s largest electronics manufacturing services provider, aim to establish a long-term partnership in the field of electric vehicles (EV) to jointly develop advanced electromobility with efficient and intelligent features. The Memorandum of Understanding (MoU) focuses on silicon carbide (SiC) development, leveraging Infineon’s automotive SiC innovations and Foxconn’s know-how in automotive systems. |
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| 08.05.2023 10:45 |
Infineon’s CoolSiC™ XHP™ 2 high-power modules enable energy-efficient electrified trains to drive decarbonization |
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Munich, Germany – 8 May, 2023 – To meet global climate targets, transportation must shift to more environmentally friendly vehicles such as energy-efficient electrified trains. Trains, however, have demanding operating profiles with frequent acceleration and braking, while being expected to operate reliably over a long service life. Consequently, energy-efficient traction applications with high-power density, reliability, and quality are required for implementation. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is addressing these requirements by adding two new products to its CoolSiC™ power module portfolio: the FF2000UXTR33T2M1 and the FF2600UXTR33T2M1. The power modules use newly developed 3.3 kV CoolSiC MOSFETs and Infineon’s interconnection technology .XT. The modules come in XHP™2 package and have been specifically tailored for traction applications. |
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| 05.05.2023 14:15 |
Infineon launches CoolGaN™ 600 V GIT HEMT portfolio, delivering exceptional performance and quality, in full supply |
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Munich, Germany – 5 May, 2023 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has successfully integrated the CoolGaN™ 600 V hybrid-drain-embedded gate injection transistor (HD-GIT) technology into its in-house manufacturing. The company is now releasing the complete portfolio of its high-quality GaN devices to the broader market. Taking advantage of Infineon’s fully owned and controlled supply chain, the expanded GaN portfolio includes a wide range of discrete and fully integrated GaN devices that far exceed JEDEC lifetime requirements. The new CoolGaN devices have been optimized for various applications ranging from industrial SMPS for servers, telecom, and solar to consumer applications, such as chargers and adapters, motor drives, TV/monitor, and led lighting systems. |
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