30.09.2005 09:30 |
Infineon and Russian KNC Cooperate in Chip Package Technology to Accelerate Development of Smart Card Markets in Russia and CIS |
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Munich/Germany and Moscow/Russia - September 30, 2005 - Infineon Technologies (FSE/NYSE: IFX), the world’s fourth-largest semiconductor manufacturer, and Koncern Nauchny Centr, KNC, one of Russia's largest union of high-tech companies, today announced they have agreed to co-operate in the field of... |
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29.09.2005 10:00 |
Infineon and Nanya to Extend Development Collaboration |
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Munich/Germany and Taoyuen/Taiwan - September 29, 2005 - Infineon Technologies AG (FSE/NYSE: IFX), Munich, and Nanya Technology Corporation (NTC), Taoyuen/ Taiwan, today announced that they have signed an agreement to expand their development cooperation on DRAMs. The agreement provides for the joint development... |
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20.09.2005 17:00 |
The construction of the new Infineon Technologies Research Centre in Bucharest is moving fast |
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Bucharest, Romania and Villach, Austria -September 20, 2005. On the 1st of April 2005, Infineon Technologies announced having established its new subsidiary in Romania: Infineon Technologies Romania SRL. Ever since, the construction of the Bucharest Research Centre has moved fast... |
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20.09.2005 16:00 |
Infineon Achieves a 300 Percent Growth Rate in the VoIP Market in 2004 and Underlines Technology Leadership with New Products at the Fall 2005 VON Tradeshow |
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Munich, Germany and Boston, USA – September 20, 2005 – Infineon Technologies AG (FSE/NYSE: IFX), a leading supplier of communication ICs (Integrated Circuit), today announced that its revenues in VoIP (Voice over Internet Protocol) CPE (Customer Premises Equipment) products grew at the rate of 300... |
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14.09.2005 14:30 |
X-FAB will not acquire Infineon plant in Perlach |
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Munich, Germany, September 14, 2005 - During discussions in the past weeks initiated by Infineon, Infineon Technologies AG (FSE/NYSE: IFX), Munich, and X-FAB Semiconductor Foundries AG, Erfurt, concluded that X-FAB will not take over the Infineon plant in Perlach. Both X-FAB and Infineon were... |
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31.08.2005 11:20 |
Infineon Offers New Silicon-Germanium Carbon Technology Based RF Transistors with Extremely Low Noise Figures for Various Wireless Applications |
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Munich, Germany - August 31, 2005 - Infineon Technologies AG (FSE/NYSE: IFX) today unveiled its new SiGe:C (Silicon-Germanium Carbon) process technology for cost-effective, high-performance radio frequency (RF) semiconductor devices. The innovative SiGe:C technology is the foundation for Infineon’s... |
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