| 19.06.2009 14:00 |
Infineon Introduces Next-Generation CoolMOS™ MOSFETs Combining the Benefits of the Superjunction Technology with the Strengths of Conventional High-Voltage Devices |
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Neubiberg, Germany and Shenzhen, China - June 19, 2009 - Today at the China Power Show in Shenzhen, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launched its next-generation 600V CoolMOS™ C6 series of high-performance MOSFETs (metal-oxide semiconductor field-effect transistors). ... |
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| 09.06.2009 15:00 |
Infineon Announces Industry First Dual LDMOS Integrated Power Amplifiers; Ideal for Doherty Architecture and Compact Cellular Amplifier Designs |
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Neubiberg, Germany and Boston - June 9, 2009 - At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced an industry first series of dual integrated LDMOS power amplifiers for wireless network base stations. Incorporating two LDMOS ... |
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| 09.06.2009 15:00 |
New Infineon High Power LDMOS Transistor Family Offers Industry-Leading Power and Bandwidth Performance for Next Generation Cellular Base Stations |
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Neubiberg, Germany and Boston - June 9, 2009 - At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a family of high-power LDMOS transistors for design of broadband wireless network base stations. With industry leading power levels ... |
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| 09.06.2009 09:40 |
Infineon and LS Industrial Systems Form Joint Venture to Forge Ahead in Molded Power Module Business for White Goods; Joint Venture to Accelerate Access to Power Module Market in Korea and Asia |
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Seoul, Korea, and Neubiberg, Germany - June 9, 2009 – The Korean company LS Industrial Systems and Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the establishment of the joint venture LS Power Semitech Co., Ltd. which will focus on the development, production and marketing of ... |
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| 03.06.2009 11:45 |
Infineon Presents MIPAQ base Module with Integrated Shunts at PCIM China |
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Neubiberg, Germany and Shanghai, China - June 3, 2009 - At the PCIM China Exhibition and Conference in Shanghai, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced high-volume availability of its IGBT (Insulated Gate Bipolar Transistor) MIPAQ™ base modules. The MIPAQ ... |
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| 28.05.2009 10:00 |
RoCC Technology Cooperation Project Promotes Wide Use of Modern Safety Technologies; Car Manufacturers and Suppliers Aim to Make Radar Sensor Systems Useable in All Vehicle Classes |
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Neubiberg, Germany - May 28, 2009 - BMW Forschung und Technik GmbH, Continental AG, Daimler AG, Infineon Technologies AG and Robert Bosch GmbH announced that they have formed the "Radar on Chip for Cars" (RoCC) technology cooperation project. The companies are engaged in joint research with the aim ... |
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