Press Releases 1243 to 1248 of 1806
22.05.2013 10:10 Infineon Enables Faster and More Cost-Effective Realization of ASIL C/D Designs for Hybrid and Electric Vehicle Subsystems; Announces Early Samples of EiceDRIVER™ SIL and EiceDRIVER™ Boost IGBT Drivers
Neubiberg, Germany - May 22, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its next generation of high-voltage IGBT gate drivers. Designed for the main inverter of hybrid and electric vehicles (HEV), the new EiceDRIVER™ SIL and the EiceDRIVER™ Boost drivers enable automotive system suppliers to more easily and more cost-effectively design HEV drivetrain subsystems that are compliant with ASIL C/D functional safety requirements (ISO 26262). ...
14.05.2013 10:10 Infineon Introduces New TO-Leadless Package – Designed for High Current Applications up to 300A
Neubiberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced the new TO-Leadless package offering reduced package resistance, significantly smaller size as well as improved EMI behavior. It contains the latest OptiMOS MOSFET generation for applications...
14.05.2013 10:10 Infineon Showcases 650V TRENCHSTOP™ 5 – Performance of Best-in-Class IGBT Gains High Customer Demand
Neubiberg, Nuremberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) highlights its 650V TRENCHSTOP™ 5 at the PCIM Europe 2013 in Nuremberg. Since the introduction of this next generation thin wafer IGBT (Insulated Gate Bipolar Transistor) in the autumn of 2012, the TRENCHSTOP™ 5...
14.05.2013 10:10 Infineon Introduces EconoDUAL™ 3 Power Modules with Automotive Qualification, Offering Both Highest Power Density and Reliability
Neubiberg / Nuremberg, Germany – May 14, 2013 – At PCIM Europe 2013 in Nuremberg (May 14-16, 2013), Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches its new EconoDUAL™ 3 IGBT modules, which are fully qualified according to automotive standards. The new offering addresses demanding applications...
07.05.2013 12:25 Infineon Adds Compact Class to EiceDRIVER™ Family - New 2EDL EiceDRIVER™ Supports a Multitude of Power Applications
Neubiberg, Germany - May 7, 2013 - Next week at the PCIM 2013 trade show for power electronics, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will present the new 2EDL EiceDRIVER™ Compact half-bridge gate driver, which is intended for applications with a blocking voltage of 600 Volts. Equipped ...
06.05.2013 15:20 Infineon Introduces TO 247-4 pin Package for CoolMOS™ MOSFETs; Significant Efficiency Improvements in Hard Switching Topologies
Neubiberg, Germany - May 6, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a TO 247-4 pin package. The added fourth pin acts as a Kelvin source to effectively reduce the parasitic inductance of the source lead of the power MOSFET. ...
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