| 14.05.2013 10:10 |
Infineon Introduces New TO-Leadless Package – Designed for High Current Applications up to 300A |
|
Neubiberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced the new TO-Leadless package offering reduced package resistance, significantly smaller size as well as improved EMI behavior. It contains the latest OptiMOS MOSFET generation for applications... |
 |
|
| 14.05.2013 10:10 |
Infineon Showcases 650V TRENCHSTOP™ 5 – Performance of Best-in-Class IGBT Gains High Customer Demand |
|
Neubiberg, Nuremberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) highlights its 650V TRENCHSTOP™ 5 at the PCIM Europe 2013 in Nuremberg. Since the introduction of this next generation thin wafer IGBT (Insulated Gate Bipolar Transistor) in the autumn of 2012, the TRENCHSTOP™ 5... |
|
|
| 14.05.2013 10:10 |
Infineon Introduces EconoDUAL™ 3 Power Modules with Automotive Qualification, Offering Both Highest Power Density and Reliability |
|
Neubiberg / Nuremberg, Germany – May 14, 2013 – At PCIM Europe 2013 in Nuremberg (May 14-16, 2013), Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches its new EconoDUAL™ 3 IGBT modules, which are fully qualified according to automotive standards. The new offering addresses demanding applications... |
|
|
| 07.05.2013 12:25 |
Infineon Adds Compact Class to EiceDRIVER™ Family - New 2EDL EiceDRIVER™ Supports a Multitude of Power Applications |
|
Neubiberg, Germany - May 7, 2013 - Next week at the PCIM 2013 trade show for power electronics, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will present the new 2EDL EiceDRIVER™ Compact half-bridge gate driver, which is intended for applications with a blocking voltage of 600 Volts. Equipped ... |
|
|
| 06.05.2013 15:20 |
Infineon Introduces TO 247-4 pin Package for CoolMOS™ MOSFETs; Significant Efficiency Improvements in Hard Switching Topologies |
|
Neubiberg, Germany - May 6, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a TO 247-4 pin package. The added fourth pin acts as a Kelvin source to effectively reduce the parasitic inductance of the source lead of the power MOSFET. ... |
|
|
| 06.05.2013 10:10 |
Infineon Introduces CoolMOS™ C7; Significant Step in Superjunction Technology Bringing the World’s Lowest RDS(on) to Hard Switching Applications |
|
Neubiberg, Germany - May 6, 2013 - Infineon Technologies (FSE: IFX / OTCQX: IFNNY) expands its High Voltage portfolio with CoolMOS™ C7, introducing a new 650V Superjunction MOSFET technology. ... |
|
|
| |
««
«
204
205
206
207
208
»
»»
|
