Press Releases 1099 to 1104 of 1710
02.04.2014 13:15 European Research: Launch of Infineon-Led Key Project “eRamp” to Strengthen the European Electronics Industry
Neubiberg and Dresden, Germany – April 2, 2014 – One of the most important
European research projects focused on energy efficiency was launched today at Infineon Technologies in Dresden. The objective of the three-year project “eRamp” is to strengthen and expand Germany and Europe as centers of ...
31.03.2014 14:15 Infineon’s New Security Chip Solution Protects Connected Electronics
Neubiberg, Germany – March 31st, 2014 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced its OPTIGA™ Trust P, a programmable hardware-based solution for improved security of electronic devices in connected systems. The addition to the OPTIGA Trust family provides robust device auth...
24.03.2014 10:15 Infineon’s 700W L-Band Transistor with Highest-in-Industry Output Power Reduces BOM and Provides Higher Reliability and Ruggedness
Neubiberg, Germany – March 24, 2014 –Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range. By lowering part ...
19.03.2014 10:15 German Researchers Make Induction Stove More Affordable and More  Energy Efficient
Neubiberg, Germany – March 19, 2014 – Induction stoves are getting more affordable and more energy efficient. This is the result of the three-year research project ”InduKOCH”. The research team consisted of E.G.O. Group, a worldwide supplier for manufacturers of household appliances, the University...
17.03.2014 18:00 Infineon’s ARM®-based Microcontroller Development Tools and Kits Named ‘Editor’s Choice’ by Embedded Computing Design
Milpitas, CA – March 17, 2014 – Infineon Technologies today announced that its XMC4500 development kits and software tools were selected as an “Editor’s Choice” by Embedded Computing Design. ...
12.03.2014 10:15 Infineon Introduces OptiMOS™ Fast Diode (FD) 200V and 250V Optimized for Body Diode Hard Commutation
Neubiberg, Germany - March 12, 2014 - Infineon Technologies (FSE: IFX / OTCQX: IFNNY) complements its Medium Voltage portfolio with the new
OptiMOS™ FD 200V and 250V. The latest generation of Power MOSFETs is optimized for body diode hard commutation and leads to higher device ruggedness, ...
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