Press Releases 1099 to 1104 of 1792
09.06.2015 11:14 Infineon Heads Three Electromobility Research Projects to Facilitate More Electric Vehicles on Europe's Roads
Munich, Germany and Brussels, Belgium – June 9, 2015 – The European Commission is launching three new research projects aimed at making electromobility cheaper, more efficient and more reliable in order to facilitate more environmentally-friendly vehicles on Europe's roads. Europe will be the site...
02.06.2015 10:45 OptiMOS™ 300 V Offers High Efficiency and New Design Possibilities in Hard Switching Applications
Munich, Germany – June 2, 2015 – Infineon Technologies (FSE: IFX / OTCQX: IFNNY) extends its medium voltage MOSFET portfolio with OptiMOSTM 300 V, setting a new standard in the Power MOSFET market. In doing so, the company confirms its position as market leader enabling energy efficient solutions in...
30.05.2015 09:15 Infineon and Google ATAP to Develop Advanced Radar Technology for Gesture Sensing and Presence Detection Applications
Munich, Germany – May 30, 2015 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that it is working with Google’s Advanced Technology and Projects group (ATAP) to develop a sensing solution. Potential applications include wearables, internet of things and automotive applications.
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19.05.2015 13:15 Infineon Launches new High-Power, Light-Triggered Thyristor with Industry’s First Integrated Protection Features
Munich, Germany – May 19, 2015 – Infineon Technologies Bipolar GmbH & Co. KG has further extended its family of bipolar semiconductors with an optically triggered thyristor that can improve the reliability, lower the system cost and simplify the design of ultra-high-power applications. Infineon’s ne...
19.05.2015 10:15 Infineon’s Next Generation CoolMOS™ Delivers 50 Percent Improved Switching Losses; EiceDRIVER™ is Setting New Standards in System Robustness
Munich, Germany - May 19, 2015 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a new family of CoolMOS™ C7 series superjunction (SJ) MOSFETs. The 600 V series offers a 50 percent reduction in turn-off losses compared to the CoolMOS™ CP, offering a GaN-like level of performance in ...
19.05.2015 09:15 Infineon Started World’s First Volume Production of Next Generation Automotive Power MOSFETs on 300-Millimeter Thin-Wafer Technology
Munich, Germany – May 19, 2015 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is the first company worldwide manufacturing automotive power MOSFETs on 300-millimeter thin wafers. The first product family OptiMOS™ 5 40V is optimized for CO2 reduction applications. The products are manufactured ...
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