| Press Releases 121 to 126 of 251 |
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| 28.04.2022 14:00 |
ROHM and Delta Electronics Form a Strategic Partnership on Developing Power Devices for Power Supply Systems |
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Willich-Münchheide, Germany, April 28, 2022 Global semiconductor supplier ROHM, together with Delta Electronics, a world-class power supply manufacturer, have entered into a strategic partnership to develop and mass produce next-generation GaN (gallium nitride) power devices. |
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| 26.04.2022 14:00 |
Expanded Lineup of ROHMs Compact PMDE Package Diodes (SBD/FRD/TVS): Contributing to Application Miniaturization |
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Willich-Münchheide, Germany, April 26, 2022 ROHM added 14 new models to its PMDE package (2.5mm × 1.3mm) lineup meeting the requirements for smaller protection and switching circuits. (RBxx8 Series, RFN Series, VS Series) |
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| 14.04.2022 09:45 |
High-tech from Nuremberg: Celebrating 25 years of SiCrystal |
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Nuremberg, Germany, April 14, 2022 SiCrystal GmbH is celebrating its 25th anniversary. Over the last two and a half decades, the company which today employs over 200 people has expanded its sphere of activity to an international level: a small but important piece of technology made in Franconia can be found in electric vehicles all over the world, for example. After all, it is often the little things that make big things happen. Based at Nordostpark industrial park in the northeast of Nuremberg, Germany, the manufacturing company is one of the current global market leaders for single crystalline silicon carbide semiconductor wafers (SiC wafers). |
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| 24.03.2022 14:00 |
ROHM Establishes QuiCur: Maximizing the Response Performance of Power Supply ICs |
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Willich-Münchheide, Germany, March 24, 2022 ROHM established QuiCur™, a new power supply technology that improves the load transient response characteristics (response performance involving response speed, and voltage stability of subsequent stage) of DC/DC converter ICs (Switching regulators) and LDOs (Linear regulators). |
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| 22.03.2022 14:00 |
ROHM starts Production of 150V GaN HEMTs: Featuring Breakthrough 8V Withstand Gate Voltage |
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Willich-Münchheide, Germany, March 22, 2022 ROHMs 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) increase the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V ideally to be applied in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices. |
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| 09.03.2022 14:00 |
SiC MOSFETs from ROHM chosen by Lucid for efficient on-board charging of groundbreaking luxury electric vehicle |
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Willich-Münchheide, Germany, March 09, 2022 ROHM Semiconductor has announced that Lucid, an advanced luxury electric vehicle company headquartered in California, is using its silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) in the ground-breaking Lucid Air. The Wunderbox, the main on-board charging unit in the Lucid Air, integrates a DC-DC converter and the Bi-directional On-Board Charger (OBC), where an advanced power factor correction circuit is capable of operating at high switching frequencies thanks to the superior performance of the SiC MOSFET. The improved performance at high frequency and high temperature of ROHM's SCT3040K and SCT3080K SiC MOSFETs have helped Lucid to reduce the size of the design, and to reduce power losses, which results in high charging efficiency. |
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