ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
Ideal for automotive LED headlamps and other high-speed switching applications
Willich-Münchheide, Germany, February 15, 2024 – ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.
(Fig. 1 + 2)

Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies – resulting in higher power loss when used for switching.

In response, ROHM developed a new series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving class-leading trr.

Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption. The new structure also improves both VF and IR loss compared to conventional planar type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.

Going forward, ROHM will strive to further improve the quality of its semiconductor devices, from low to high voltages, while strengthening its expansive lineup to further reduce power consumption and achieve greater miniaturization.
(Fig. 3 + 4)

SBD Trench MOS Structure
The trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration. This reduces the resistance of the epitaxial wafer layer, achieving lower VF when applying voltage in the forward direction. At the same time, during reverse bias the electric field concentration is minimized, significantly decreasing IR. As a result, the YQ series improves VF and IR by approx. 7% and 82%, respectively, compared to conventional products.
(Fig. 5)

And unlike with typical trench MOS structures where trr is worse than planar types due to larger parasitic capacitance (resistance component in the device), the YQ series achieves an industry-leading trr of 15ns by adopting a unique structural design. This allows switching losses to be reduced by approx. 26%, contributing to lower application power consumption.

Application Examples
• Automotive LED headlamps
• xEV DC-DC converters
• Power supplies for industrial equipment
• Lighting

Lineup
(Fig. 6)

Product Page and Related Information
Application notes highlighting the advantages of these new products in circuits along with a white paper that showcases the features of each SBD series are available on ROHM's website. An SBD page is also available that allows users to narrow down product options by entering voltage conditions and other parameters, facilitating the selection process during design. Click on the URLs below for more information.

ROHM SBD Product Page
https://www.rohm.com/products/diodes/schottky-barrier-diodes

Application Notes
Advantages of YQ Series: Compact and Highly Power Conversion Efficiency Schottky Barrier Diodes for Automotive
https://fscdn.rohm.com/en/products/databook/applinote/discrete/diodes/yq_sbd_automotive_an-e.pdf

White Paper
ROHM's SBD Lineup Contributes to Greater Miniaturization and Lower Loss in Automotive, Industrial, and Consumer Equipment
https://fscdn.rohm.com/en/products/databook/white_paper/discrete/diodes/sbd_lineup_wp-e.pdf

Online Sales Information
Online Distributors: DigiKey, Mouser and Farnell
Applicable Part Nos: Refer to table (Fig. 6)
Availability: December 2023
The products will be sold at other online distributors as well.

Visit ROHM’s Website for More Information
https://www.rohm.com/news-detail?news-title=2024-02-15_news_sbd&defaultGroupId=false

*ROHM February 15, 2024 study

About ROHM Semiconductor
ROHM Semiconductor is a global company of 507.8 billion yen (3.9 billion US dollars) per March 31st, 2023, with over 23,700 employees. The company develops and manufactures a very large product range from SiC Diodes and MOSFETs, Analog ICs such as Gate Drivers and Power Management ICs to Power Transistors and Diodes to Passive Components. The production of ROHM’s high performing products is taking place in state-of-the-art manufacturing plants in Japan, Germany, Korea, Malaysia, Thailand, the Philippines, and China. ROHM Semiconductor Europe has its Head Office near Dusseldorf serving the EMEA region (Europe, Middle East, and Africa).
For further information, please contact www.rohm.com

 
 
 
» ROHM Semiconductor
» Press Releases
» Press Release
Date: 15.02.2024 14:00
Number: PR05/24EN
» Press Photos

 Download der hochauflösenden Version...
ROHM’s New SBDs: Achieving Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

 Download der hochauflösenden Version...
Fig. 1

 Download der hochauflösenden Version...
Fig. 2

 Download der hochauflösenden Version...
Fig. 3

 Download der hochauflösenden Version...
Fig. 4

 Download der hochauflösenden Version...
Fig. 5

 Download der hochauflösenden Version...
Fig. 6
» Contacts
ROHM Semiconductor GmbH
Public Relations
Katrin Haasis-Schmidt  
Karl-Arnold-Str. 15
D-47877 Willich-Münchheide
Germany
Phone: +49 2154 921 0
katrin.haasis-schmidt@de.rohmeurope.com
» Contact Agency
Mexperts AG
Wildmoos 7
D-82266 Inning am Ammersee
Germany
Contact: Peter Gramenz
Phone: +49 8143 59744 12
peter.gramenz@mexperts.de
» More Press Releases
22.04.2024 09:05
ROHM Group Company SiCrystal and STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement

10.04.2024 14:00
ROHM Develops a New Op Amp that Minimizes Current Consumption

14.03.2024 14:00
ROHM Develops Automotive Primary LDOs: Leveraging Original QuiCur™ Technology to Achieve Industry-Leading* Load Response Characteristics

27.02.2024 11:00
ROHM's EcoGaN™ has been adopted in the 45W Output USB-C Charger C4 Duo from Innergie, a brand of Delta

21.02.2024 14:00
New Thermal Printhead Provides Clear Printing at High Speeds Even on a Single-Cell Li-ion Battery