ROHM’s New EcoGaN™ Power Stage ICs Contribute to Smaller Size and Lower Loss
Reduces component volume by 99% and power loss by 55% when replacing silicon MOSFETs
Willich-Münchheide, Germany, August 31, 2023 – ROHM has developed power stage ICs with built-in 650V GaN HEMTs and gate driver - the BM3G0xxMUV-LB series. The devices are ideal for primary power supplies inside industrial and consumer applications such as data servers and AC adapters.
(Fig. 1)

Consumer and industrial sectors more and more demand greater energy savings to achieve a sustainable society in the last few years. However, while GaN HEMTs are expected to significantly contribute to greater miniaturization and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, ROHM developed power stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analog technologies, facilitating mounting considerably.

On top, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) incorporates additional functions and peripheral components designed to maximize GaN HEMT performance along with 650V GaN HEMTs - the next generation of power devices. And ROHM’s features such as a wide drive voltage range (2.5V to 30V) enable compatibility with virtually any controller IC in primary power supplies - facilitating replacement of existing silicon (Super Junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by approx. 99% and 55%, respectively, achieving higher efficiency in a smaller size.

ISAAC LIN, General Manager, PSADC (Power Semiconductor Applications Development Center), Delta Electronics, Inc.
“GaN devices are attracting a great deal of attention in the industries as a device that greatly contributes to the miniaturization and energy saving of equipment.
ROHM's new products have realized high speed and safe gate drive by using ROHM's original analog technology. These products will further promote the use of GaN power devices, which are expected to grow.”

(Fig. 2 + 3)

Product Lineup
A wide drive voltage range (2.5V to 30V), short propagation delay, and fast startup time enable compatibility with virtually any controller IC in primary power supplies.
(Fig. 4)

Application Examples
Optimized for primary power supplies (AC-DC, PFC circuits) in a variety of applications.
Consumer: Home appliances, AC adapters, PCs, TVs, Refrigerators, Air Conditioners
Industrial: Servers, Office automation devices

Online Sales Information
Distributors: DigiKey, Mouser and Farnell
Products and evaluation boards will be offered at online distributors as they become available.
Sales Launch Date: June 2023

Product Information
Applicable Part Nos.

Evaluation Board Part Nos.
BM3G007MUV-EVK-002 (PFC 240W)
(Fig. 5)

Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.

EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.

About ROHM Semiconductor
ROHM Semiconductor is a global company of 507.8 billion yen (3.9 billion US dollars) per March 31st, 2023, with over 23,700 employees. The company develops and manufactures a very large product range from SiC Diodes and MOSFETs, Analog ICs such as Gate Drivers and Power Management ICs to Power Transistors and Diodes to Passive Components. The production of our high performing products is taking place in state-of-the-art manufacturing plants in Japan, Germany, Korea, Malaysia, Thailand, the Philippines, and China. ROHM Semiconductor Europe has its Head Office near Dusseldorf serving the EMEA region (Europe, Middle East, and Africa).
For further information, please contact
» ROHM Semiconductor
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» Press Release
Date: 31.08.2023 14:00
Number: PR27/23EN
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ROHM’s New EcoGaN™ Power Stage ICs Contribute to Smaller Size and Lower Loss

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ROHM Semiconductor GmbH
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