ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed

Willich-Münchheide, Germany, July 10, 2025 – ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance. Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement. The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase. As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption. <Related Information> • White Papers • Design Model Support Page • SiC MOSFET Technical Documentation Looking ahead, ROHM remains committed to advancing simulation technology to enable the design for higher-performance and more efficient applications, driving continued innovation in power conversion systems.

About ROHM Semiconductor ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. ROHM’s strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e. transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance. Please visit ROHM’s website for more information: https://www.rohm.com