600 V CoolMOS™ CFD7 SJ MOSFET pushes the performance boundary to the next level

Munich, Germany – 21 November 2017 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) releases the latest high-voltage Superjunction MOSFET technology, the 600 V CoolMOS™ CFD7 completing the CoolMOS 7 series. This new MOSFET addresses the high power SMPS market for resonant topologies. It offers industry-leading efficiency and reliability in soft switching topologies like LLC and ZVS PSFB. This makes it a perfect fit for high power SMPS applications such as Servers, Telecom equipment power, and EV charging stations. The 600 V CoolMOS CFD7 succeeds the CoolMOS CFD2. The new MOSFET is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process. The 600 V CoolMOS CFD7 features reduced gate charge (Q g) and improved turn-off behavior. Additionally, it has a reverse recovery charge (Q rr), which is up to 69 percent lower than competing products in the marketplace. The 600 V CoolMOS CFD7 provides industry-leading solutions for THD and SMD devices, which supports high power density solutions. Availability The 600 V CoolMOS CFD7 is available now in mass production and samples can be ordered. More information is available at www.infineon.com/cfd7.

About Infineon Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future. In the 2016 fiscal year (ending September 30), the company reported sales of about Euro 6.5 billion with more than 36,000 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Follow us: Twitter – Facebook - LinkedIn