OptiMOS™ Linear FET combines a low RDS(on) with a large Safe Operating Area

Munich, Germany – 25 July 2017 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches the OptiMOS™ Linear FET series. This new product family combines the state-of-the-art on-state resistance (RDS(ON)) of a trench MOSFET with the wide Safe Operating Area of a planar MOSFET. This solves the trade-off between RDS(ON) and linear mode capability. The OptiMOS Linear FET can operate in the saturation region of an enhanced mode MOSFET. It is the perfect fit for hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS). Both, the rugged linear mode operation and the higher pulse current contribute to low conduction losses, faster start-up, and shorter down time. The OptiMOS Linear FET prevents damage at the load if there is a short circuit, by limiting high in-rush currents. Availability The OptiMOS Linear FET is available now in three voltage classes: 100 V, 150 V, and 200 V. They can be supplied in either a D²PAK or D²PAK 7pin package. These industry standard packages offer a compatible footprint for drop-in replacement. More information is available at www.infineon.com/optimos-linearfet.

About Infineon Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future. In the 2016 fiscal year (ending September 30), the company reported sales of about Euro 6.5 billion with more than 36,000 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Follow us: twitter.com/Infineon – facebook.com/Infineon