Infineon’s 700W L-Band Transistor with Highest-in-Industry Output Power Reduces BOM and Provides Higher Reliability and Ruggedness
Neubiberg, Germany – March 24, 2014 –Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range. By lowering part counts, the new device can reduce system cost and improve reliability while maintaining high ruggedness.

Radar systems emit a high-powered electronic pulse within a specific frequency range and detect the return echoes of each pulse to form an image of distant objects. In this demanding application, the transistors used in the power supply of these pulsed systems must be highly efficient and capable of driving a stable signal in all operating conditions.

Infineon’s new power transistor, PTVA127002EV, is well-suited for L-Band radar systems used in air traffic control and weather observation applications. High efficiency corresponds with low heat output, and high ruggedness (ability to withstand 10:1 VSWR load mismatch) further contributes to the advantages of low component count made possible by the 700W output.

Based on the company’s 50V LDMOS power transistor technology, the PTVA127002EV exhibits excellent efficiency; typically 55 percent across the 1200-1400 MHz band, with a P1dB output power of 700W, 16dB gain and low thermal resistance characteristics when measured with a 300 µS 10% duty cycle pulse.

With the new addition, Infineon now offers a family of RF power transistors for 1200 – 1400 MHz system applications with rated power output of 25W, 50W, 350W and 700W. In addition to ruggedness, common specifications for each device include wide gate source voltage range (-6V to 12V), and integrated electrostatic discharge (ESD) protection.

Availability

Engineering samples and an evaluation board are available now.
Additional technical information on the complete portfolio of Infineon RF Power transistors and integrated RF power amplifiers is available at www.infineon.com/rfpower
About Infineon

InfineonTechnologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2013 fiscal year (ending September 30), the company reported sales of Euro 3.84 billion with close to 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).

Further information is available at www.infineon.com
 
 
 
» Infineon Technologies
» Press Releases
» Press Release
Date: 24.03.2014 10:15
Number: IFAG_700WLBandTransistor en
» Press Photos

 Download der hochauflösenden Version...
Infineon’s 700W L-Band Transistor
» Contacts
Infineon Technologies AG

Media Relations
Tel: +49-89-234-28480
Fax: +49-89-234-9554521
media.relations@infineon.com

Investor Relations:
Tel: +49 89 234-26655
Fax: +49 89 234-9552987
investor.relations@infineon.com
» More Press Releases
19.04.2024 10:15
New MOTIX™ motor gate driver IC: enabling easy migration from 12 V to 48 V systems and full support of functional safety requirements

17.04.2024 10:15
Infineon provides FOXESS with power semiconductors to improve efficiency and power density of energy storage applications

15.04.2024 09:00
Infineon receives “GaN Strategic Partner of the Year” award from Chicony Power Technology

12.04.2024 10:15
Vector enables the power of Infineon’s AURIX™ TC4x cyber security features

10.04.2024 11:00
AURIX™ TC4x microcontrollers for embedded AI application development receive safety assessment from Fraunhofer IKS