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Infineon Technologies (04.05.2016 12:15)
Infineon unveils 1200 V Silicon Carbide MOSFET technology for unprecedented efficiency and performance in power conversion designs

Dr. Helmut Gassel, President of the Industrial Power Control Division of Infineon Technologies AG Munich, Germany – May 4, 2016 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has unveiled a revolutionary silicon carbide (SiC) MOSFET technology allowing product designs to achieve previously unattainable levels of power density and performance. Infineon’s CoolSiC™ MOSFETs offer a new degree ...
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