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Infineon Technologies (04.05.2016 12:15)
Infineon unveils 1200 V Silicon Carbide MOSFET technology for unprecedented efficiency and performance in power conversion designs

Dr. Helmut Gassel, President of the Industrial Power Control Division of Infineon Technologies AG Munich, Germany – May 4, 2016 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has unveiled a revolutionary silicon carbide (SiC) MOSFET technology allowing product designs to achieve previously unattainable levels of power density and performance. Infineon’s CoolSiC™ MOSFETs offer a new degree ...
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» Infineon Technologies (26.04.2016 17:25)
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» Infineon Technologies (26.04.2016 14:15)
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» Infineon Technologies (26.04.2016 12:00)
At CERN, eight-inch sensor chips from Infineon could reveal the mysteries of the universe
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IAR Embedded Workbench integrates the NXP S32 Design Studio for automotive and ultra-reliable designs
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ARCCORE releases version 12.0 of embedded AUTOSAR platform and configuration tools
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