Press Releases of Infineon Technologies
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Latest press releases of Infineon Technologies (Provided by MEXPERTS AG)en-USInfineon TechnologiesMEXPERTS AG (info@mexperts.de)Copyright 2010 MEXPERTS AG2024-03-19T09:22+01:00presseagentur.com - the press portal of MEXPERTS AG
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http://www.presseagentur.com/pics/rdf_logo.gifInfineon partner Thistle Technologies integrates its Verified Boot technology with Infineon’s OPTIGA™ Trust M for enhanced device security
https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFCSS202403-077.html
Munich, Germany and San Francisco, CA, USA – 14 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the integration of its OPTIGA™ Trust M security controller, with tamper-resistant hardware certified to Common Criteria EAL6+, with the Verified Boot technology by Thistle Technologies, a pioneer of advanced security solutions for connected devices. This integration enables designers to easily defend their devices against firmware tampering and protect the software supply chain integrity. The result is an improved end-user security, which is particularly important in industries with high security requirements such as healthcare, automotive and device manufacturing.2024-03-14T10:15+01:00Infineon sues Innoscience for Patent Infringement
https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202403-074.html
Munich, Germany – 14 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates (hereinafter: Innoscience). Infineon is seeking permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon. The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The lawsuit was filed in the district court of the Central District of California.2024-03-14T08:30+01:00Infineon sets new industry standard for enhanced power density and efficiency with OptiMOS™ 6 200 V MOSFETs
https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202403-076.html
Munich, Germany – 13 March 2024 – Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts. The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others. Additionally, the combination of a wide safe operating area (SOA) and industry-leading RDS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.2024-03-13T14:15+01:00Infineon’s new CoolSiC™ MOSFETs 2000 V offer increased power density without compromising system reliability
https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFGIP202403-075.html
Munich, Germany – 12 March 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are ideal for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications.2024-03-12T10:15+01:00Infineon introduces CoolSiC™ MOSFET G2, the next generation of silicon carbide technology for high-performance systems that drive decarbonization
https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFGIP202403-073.html
Munich, Germany - March 5, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.2024-03-05T08:15+01:00Infineon enhances the TRAVEO™ T2G MCU family with Qt Group graphics solution to enable intelligent rendering technologies
https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFATV202403-072.html
Munich, Germany – 1 March 2024 – In the highly competitive global semiconductor market, manufacturers are constantly striving for shorter time-to-market. At the same time, the demand for fluid and high-resolution graphical displays is increasing. To address these market demands, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announces its strategic collaboration with Qt Group, a global software company providing cross-platform solutions for the entire software development lifecycle. This collaboration brings Qt's lightweight, high-performance graphics framework to Infineon's graphics-enabled TRAVEO™ T2G cluster microcontrollers and represents a paradigm shift in graphical user interface (GUI) development.2024-03-01T10:15+01:00PSoC™ Automotive 4100S Max supports fifth generation CAPSENSE™ technology with higher performance
https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFATV202402-071.html
Munich, Germany – 29 February, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched the new Automotive PSoC™ 4100S Max family. This microcontroller device family expands Infineon’s portfolio of CAPSENSE™ enabled Human Machine Interface (HMI) solutions for automotive body/HVAC and steering wheel applications by delivering higher flash densities, GPIOs, CAN-FD, and HW-Security. 2024-02-29T10:15+01:00Infineon introduces new Solid-State Isolators to deliver faster switching with up to 70 percent lower power dissipation
https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFGIP202402-070.html
Munich, Germany, and Long Beach, California - 28 February 2024 – Today at the Applied Power Electronics Conference (APEC), Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduced a new product family of Solid-State Isolators to achieve faster and more reliable circuit switching with protection features not available in optical-based solid state relays (SSR). The isolators use coreless transformer technology and support 20 times greater energy transfer with both current and temperature protection contributing to a higher reliability and lower cost of ownership. The new solid-state isolators allow driving the gates of Infineon’s MOS-controlled power transistors OptiMOS ™ and CoolMOS™ to reduce power dissipation of up to 70 percent of todays’ solid-state relays using SCR (silicon-controlled rectifier) and Triac switches.2024-02-28T11:15+01:00Infineon reorganizes sales and marketing to boost customer centricity and lead in application support
https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202402-068.html
Munich, Germany – 28 February 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is setting the course for ambitious growth by further strengthening and streamlining its sales organization. Starting 1 March, Infineon’s sales team will be structured around three customer-centric Sales Segments: “Automotive”, “Industrial & Infrastructure” and “Consumer, Computing & Communication”. The DEM sales organization will retain responsibility for distributors and Electronics Manufacturing Services (EMS). This new structure will further leverage the potential of Infineon’s comprehensive and diverse product portfolio by putting customers’ application needs at the center of the new organizational model. All of these organizations will be deployed globally with an optimized regional footprint.2024-02-28T09:30+01:00Infineon advances automotive and industrial solutions with newly launched CoolSiC™ MOSFET 750 V G1 product family
https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202402-069.html
Munich, Germany – 27 February 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the 750V G1 discrete CoolSiC™ MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications. The product family includes both industrial-graded and automotive-graded SiC MOSFETs that are optimized for totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase-shifted full bridge (PSFB) topologies. The MOSFETs are ideal for use in both typical industrial applications, such as electric vehicle charging, industrial drives, solar and energy storage systems, solid state circuit breaker, UPS systems, servers/datacenters, telecom, and in the automotive sector, such as onboard chargers (OBC), DC-DC converters, and many more.2024-02-27T14:15+01:00