Press Releases of Infineon Technologies
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Latest press releases of Infineon Technologies (Provided by MEXPERTS AG)en-USInfineon TechnologiesMEXPERTS AG (info@mexperts.de)Copyright 2010 MEXPERTS AG2013-05-25T19:05+01:00presseagentur.com - the press portal of MEXPERTS AG
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http://www.presseagentur.com/pics/rdf_logo.gifInfineon Ships Security Chips to Taiwan’s Electronic Passport Program
http://www.presseagentur.com/infineon/detail.php?pr_id=3453&lang=en
Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that it is supplying security chips to Taiwan’s electronic passport program. Infineon is the only supplier and has started shipping security chips of the SLE78 product family based on the digital ...2013-05-23T13:40+01:00Infineon presents high-performance LNA for Global Navigation Satellite Systems; BGA825L6S increases satisfaction of smartphone users
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Neubiberg, Germany - May 23, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced BGA825L6S, a highly cost-effective Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS). It features an ultra-low noise figure, high linearity, ...2013-05-23T13:10+01:00Infineon Enables Faster and More Cost-Effective Realization of ASIL C/D Designs for Hybrid and Electric Vehicle Subsystems; Announces Early Samples of EiceDRIVER™ SIL and EiceDRIVER™ Boost IGBT Drivers
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Neubiberg, Germany - May 22, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced its next generation of high-voltage IGBT gate drivers. Designed for the main inverter of hybrid and electric vehicles (HEV), the new EiceDRIVER™ SIL and the EiceDRIVER™ Boost drivers enable automotive system suppliers to more easily and more cost-effectively design HEV drivetrain subsystems that are compliant with ASIL C/D functional safety requirements (ISO 26262). ...2013-05-22T10:10+01:00Infineon Introduces New TO-Leadless Package – Designed for High Current Applications up to 300A
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Neubiberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced the new TO-Leadless package offering reduced package resistance, significantly smaller size as well as improved EMI behavior. It contains the latest OptiMOS MOSFET generation for applications...2013-05-14T10:10+01:00Infineon Showcases 650V TRENCHSTOP™ 5 – Performance of Best-in-Class IGBT Gains High Customer Demand
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Neubiberg, Nuremberg, Germany – May 14, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) highlights its 650V TRENCHSTOP™ 5 at the PCIM Europe 2013 in Nuremberg. Since the introduction of this next generation thin wafer IGBT (Insulated Gate Bipolar Transistor) in the autumn of 2012, the TRENCHSTOP™ 5...2013-05-14T10:10+01:00Infineon Introduces EconoDUAL™ 3 Power Modules with Automotive Qualification, Offering Both Highest Power Density and Reliability
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Neubiberg / Nuremberg, Germany – May 14, 2013 – At PCIM Europe 2013 in Nuremberg (May 14-16, 2013), Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches its new EconoDUAL™ 3 IGBT modules, which are fully qualified according to automotive standards. The new offering addresses demanding applications...2013-05-14T10:10+01:00Infineon Adds Compact Class to EiceDRIVER™ Family - New 2EDL EiceDRIVER™ Supports a Multitude of Power Applications
http://www.presseagentur.com/infineon/detail.php?pr_id=3436&lang=en
Neubiberg, Germany - May 7, 2013 - Next week at the PCIM 2013 trade show for power electronics, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will present the new 2EDL EiceDRIVER™ Compact half-bridge gate driver, which is intended for applications with a blocking voltage of 600 Volts. Equipped ...2013-05-07T12:25+01:00Infineon Introduces TO 247-4 pin Package for CoolMOS™ MOSFETs; Significant Efficiency Improvements in Hard Switching Topologies
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Neubiberg, Germany - May 6, 2013 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a TO 247-4 pin package. The added fourth pin acts as a Kelvin source to effectively reduce the parasitic inductance of the source lead of the power MOSFET. ...2013-05-06T15:20+01:00Infineon Introduces CoolMOS™ C7; Significant Step in Superjunction Technology Bringing the World’s Lowest RDS(on) to Hard Switching Applications
http://www.presseagentur.com/infineon/detail.php?pr_id=3432&lang=en
Neubiberg, Germany - May 6, 2013 - Infineon Technologies (FSE: IFX / OTCQX: IFNNY) expands its High Voltage portfolio with CoolMOS[tm] C7, introducing a new 650V Superjunction MOSFET technology. ...2013-05-06T10:10+01:00Second-quarter revenue and Segment Result significantly above previous quarter
http://www.presseagentur.com/infineon/detail.php?pr_id=3430&lang=en
Neubiberg, Germany - May 2, 2013. Infineon Technologies AG today reported results for the second quarter of the 2013 fiscal year, ended March 31, 2013. ...2013-05-02T07:43+01:00