EiceDRIVER 2ED 650 V with integrated bootstrap diodes offers superior robustness and reliability

Munich, Germany – 6 November 2018 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a new half-bridge, 650 V rated EiceDRIVER based on the company’s unique SOI technology. The 2ED2304S06F provides leading negative VS transient immunity, monolithic integration of a real diode for bootstrap, and superior latch-up immunity. Combined with higher frequency switching, these unique features enable more robust, reliable, smaller systems and reduce BOM cost. The half-bridge gate driver is ideally suited for Major and Small Home Appliance, Low Power Drives, and other general inverterized motor drive applications below 1 kW. The EiceDRIVER 2ED supports typical source and sink currents of 360 mA and 700 mA, respectively, with 310 ns and 300 ns propagation delays. It is a perfect match for IGBT and MOSFET switches rated up to 650 V. The integrated bootstrap diode offers ultra-fast reverse recovery with a typical 36 Ω on-resistance. Negative transient voltage (VS) immunity of -100 V with repeating pulses provides superior robustness and reliable motor operation. Additional safety features include integrated dead time with cross-conduction prevention logic and independent under-voltage lockout (UVLO) for high and low side voltage supplies. Availability Electrically and functionally, the half-bridge gate driver is a drop-in replacement for earlier generation devices IR2304SPBF and IRS2304SPBF. The EiceDRIVER 2ED is available in industry standard DSO-8 (SOIC8) package. It is fully production released, production samples can be ordered now. More information is available at www.infineon.com/EiceDRIVER.

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