Infineon Ships More Than One Billion TVS Diodes in Chip-Scale Packages in 2014, Protects Millions of Electronic Products from Accidental Failure

Munich, Germany – February 23, 2015 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced a shipment milestone for its ultra-small TVS diodes used to protect electronic products from electrostatic discharge (ESD). More than one billion TVS diodes in the company’s bare silicon wafer level leadless (WLL) package were delivered to customers in calendar year 2014. TVS diodes in WLL packages are used in applications where miniaturization is a priority, including touch screen and keypad interfaces and the increasingly popular high-speed data ports used in mobile electronics. High signaling speed and small size both increase the vulnerability of electronics to ESD, while simultaneously requiring that the diodes used do not degrade signal quality of the circuit. Infineon’s TVS diodes are recognized for the exceptionally low parasitic resistance needed for high signal quality while meeting or exceeding all requirements for protection from severe ESD defined in the IEC61000-4-2 standard. The Infineon SG-WWL-2-1 package has a tiny footprint (0.58 mm x 0.28 mm) and is just 0.15 mm thin. It is designed for direct attachment to printed circuit boards adjacent to a connector, such as a USB port, or an external contact point such as a control button or touchpad. With an average of 10-30 TVS diodes used in typical consumer electronics products this small size with no sacrifice in performance is a great benefit for achieving miniaturization goals. WLL packaged devices in the Infineon TVS diode portfolio include the multi-purpose diode ESD200-B1-CSP0201, which protects human/device interface points such as touchscreens, keypads/boards, buttons and audio/headset input ports. Designed to clamp electrostatic discharges to a voltage level of just 12V, the diode’s bidirectional characteristics simplifies assembly onto the PCB on high volume production lines. The diode absorbs ESD strikes up to ±16000V for air and contact discharge, whereas the standard test specified by IEC61000-4-2 only demand for safety at contact discharges at ±8000V. The diode ESD108-B1-CSP0201, which is designed for protection of high-speed interfaces, provides an exceptional combination of low clamping voltage of 20V for ±8000V contact discharge and low parasitic capacitance of 0.28pF typically found at 1MHz. Both, low clamping and parasitic capacitance, ensure critical signal integrity. The diode absorbs ESD strikes up to ±25000V for air and contact discharge, which far exceeds standard requirements of ±8000V contact and ±15000V air discharge. Design Support for ESD Protection Infineon supports customer programs to design systems for ESD robustness and protection through expert consultation and a comprehensive library of simulation models for TVS diodes. For further information on Transient Voltage Suppressor (TVS) diodes from Infineon, please visit www.infineon.com/tvsdiodes Infineon at Mobile World Congress Infineon will exhibit its comprehensive portfolio for “performance and security in the connected world” at the Mobile World Congress 2015 in Barcelona, Spain, March 2-5. Visit us in hall 6 at booth 6B62. Further information is available at: http://www.infineon.com/mobile

About Infineon Infineon Technologies AG is a world leader in semiconductors. Infineon offers products and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2014 fiscal year (ending September 30), the company reported sales of Euro 4.3 billion with about 29,800 employees worldwide. In January 2015, Infineon acquired US-based International Rectifier Corporation, a leading provider of power management technology, with revenues of USD 1.1 billion (fiscal year 2014 ending June 29) and approximately 4,200 employees. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).